2022
DOI: 10.21883/sc.2022.05.53424.9789
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Temperature dependence of the Fermi level in HgCdTe narrow-gap bulk films at different mercury vacancy concentrations

Abstract: We calculate Fermi level position in bulk HgCdTe with cadmium fraction from 19 to 22% as a function of temperature for different concentrations of mercury vacancies forming double-charged acceptors with ionization energies of 11 and 21 meV for neutral and singly charged states respectively. The concentration of free carriers in the bands at different temperatures and the proportion of acceptor centres in different charge states are calculated as well. The results explain the fast temperature quenching of photo… Show more

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