Temperature dependence of the fundamental absorption edge in CuInTe2

Abstract

The temperature dependence of the energy gap EG and the binding energy Rx of free excitons in single crystals of CuInTe2 have been calculated using Elliot’s model. The samples were prepared by the method of tellurization of stoichiometric Cu and In in liquid phase and the vertical Bridgman technique. The value of Rx around 4 meV agrees quite well with that deduced from the effective mass approximation. The variation of EG with temperature is compared with the empirical model proposed by A. Mannogian and J. C. Woolley [Can. J. Phys. 62, 285 (1984)]. The estimated value of the Debye temperature is in agreement with ΘD=191.4 K reported from specific heat measurements.

Temperature dependence of the photoluminescence spectra of single crystals of CuInTe2

“…This value of 6 meV is in good agreement with the binding energy R x ϭ(4.3Ϯ1.2) meV of the free-exciton obtained at 10 K in Ref. 6. Furthermore, from the effective mass arguments based on the hydrogenic model with the…”

Study of polycrystalline bulk CuIn1–xGaxTe2

“…According to the mode of elaboration and the nature of the secondary or ternary phases, the value of the band gap may vary. The band gap in this semiconductor can be changed from 1.06 to 1.25 eV by alloying In with Ga. A value of 1.0593 at 4.2 K was given by Marin et al [5] for a single crystal of CuInTe 2 . However, a band gap between 1.18 and 1.40 eV [6][7][8] for CuGaTe 2 at room temperature has been reported.…”

Synthesis of CuInTe2 by Rapid Thermal Annealing of In/Cu/Te Stacked Elemental Layers

“…CuInTe 2 is a direct bandgap semiconductor for which a wide range of values between 0.92 and 1.04 eV for the fundamental bandgap at room temperature has been reported [1,2]. These I-III-VI 2 ternary compound semiconductors have aroused tremendous interest in recent years for their possible device applications in the areas of solar cells, visible and infrared light-emitting diodes, infrared detectors, etc.…”

“…A survey of the literature indicates that there are not very many reports on CuInTe 2 in thin film form although electrical and optical properties of the material in bulk were reported by several workers [1,2,[7][8][9][10]. Structural and compositional investigations of pulsed laser deposited CuInTe 2 films have been reported by Gremenok et al [11].…”

“…They observed the presence of a shallow acceptor level at 30 meV due to indium vacancy. Marin et al [1] measured the temperature dependence of the bandgap and evaluated the binding energy of free excitons in single crystal CuInTe 2 . Rincon et al [8,9] reported the variation of photoluminescence in CuInTe 2 with temperature between 10 and 120 K. Emissions due to free and bound excitons have been identified.…”