Temperature dependence of the Hall angle in a correlated three-dimensional metal

Abstract

The Hall coefficient, R H , of the Mott-Hubbard system vanadium sesquioxide has a strong temperature dependence in the barely delocalized metal. As in the case of the cuprate superconductors, we find that the resistivity and the Hall angle of V 2Ϫy O 3 follow different power laws in temperature, implying different longitudinal and transverse scattering mechanisms. Far from half-filling, only one transport scattering rate is needed to describe the data, at which point the temperature dependence of R H disappears. ͓S0163-1829͑98͒51922-4͔The peculiar temperature dependence of the Hall coefficient in the superconducting cuprates is a striking manifestation of their unconventional normal-state properties. With the magnetic field applied perpendicular to the CuO 2 planes, the Hall coefficient rapidly increases with decreasing temperature, peaking just above the superconducting transition temperature. In studies of ( xy / xx ), reveals two separate relaxation rates for carrier motion. Whereas the planar resistivity varies linearly with T, cot H ϳT 2 , implying different longitudinal and transverse ͑''Hall''͒ scattering mechanisms. These experimental results have then been cited as evidence for Anderson's theoretical picture 3 of the decoupling of spin and charge in a highly correlated, two-dimensional system.We find in the three-dimensional correlated metal, V 2Ϫy O 3 , a remarkably similar experimental situation. Vanadium sesquioxide has served as the prototype for the MottHubbard metal-insulator transition, with coincident electronic, magnetic, and structural phase transitions. 4,5 With the magnetic field applied along any arbitrary direction, the Hall coefficient rapidly increases with decreasing temperature in the barely delocalized metal, peaking just above the Néel temperature. Parametrization of the data in terms of the Hall angle reveals two separate relaxation rates for carrier motion. Whereas the longitudinal resistivity follows a T 3/2 form consistent with scattering off spin fluctuations, again cot H ϳT 2 . The microscopic origin of an additional scattering rate is unclear, but it appears to be linked to the proximity of the Mott-Hubbard transition; the anomalous temperature dependence of the Hall coefficient ͑and the different power laws for and cot H ͒ disappear for crystals with large hole concentrations.Single crystals of V 2 O 3 were grown using a skull melter and then were annealed in a CO-CO 2 atmosphere at 1400°C for approximately two weeks to adjust the stoichiometry uniformly. 6 The stoichiometry of the V 2Ϫy O 3 crystals was determined within 0.001 of y using thermograviometric analysis. 7 Hall measurements were performed in the linear field regime on crystals with typical dimensions 1ϫ1 ϫ0.15 mm 3 . Hydrostatic pressures up to 7 kbar were achieved using a BeCu piston-anvil self-locking pressure clamp with silicone oil as the pressure medium and a fragment of ͑V 0.99 Ti 0.01 ͒ 2 O 3 as the manometer.8 All magnetotransport and magnetic susceptibility data were obtained in the ohmic and frequency-i...

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“…[43] Moreover, R H in V 2 O 3 shows the singular T -dependence near the AF phase boundary. [71,72] According to eq. (12) in ref.…”

Theory of Hall Effect and Electrical Transport in High-TcCuprates: Effects of Antiferromagnetic Spin Fluctuations

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Separation of transport lifetimes inSrTiO3-based two-dimensional electron liquids

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