Temperature dependence of the interband critical-point parameters of InP

Lautenschlager, P.; Garriga, M.; Cardona, M.

doi:10.1103/physrevb.36.4813

Cited by 228 publications

(101 citation statements)

References 52 publications

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“…28. butions of III-V compound materials. 39,40 Such critical-point structures are known to be temperature dependent. Dependencies like this can be used for precise in situ sampletemperature control.…”

Section: A In Situ Vis-se Investigationsmentioning

confidence: 99%

In situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures

Franke

Schubert

Hecht

et al. 1998

Journal of Applied Physics

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In situ infrared ͑IR͒ spectroscopy and visible-light ͑VIS͒ spectroscopic ellipsometry over the spectral range from 700 to 2000 cm Ϫ1 and 1.5-3.5 eV, respectively, were used to investigate the optical behavior of boron nitride ͑BN͒ thin films at temperatures from room temperature ͑RT͒ to 600°C. The polycrystalline hexagonal ͑h͒ and mixed-phase h-and cubic (c)-BN thin films were deposited by magnetron sputtering on ͓001͔ silicon. We observe a reversible moisture incorporation process in as-grown h-BN samples. When stored in normal ambient, the h-BN thin films absorb water into thin-film micropores. When annealed in ultrahigh vacuum or a dry nitrogen atmosphere, the samples expel moisture but retain their microstructure. This is observable by reduction of the thin-film refractive indices in accordance with changes in the IR lattice resonance behavior. The optical properties of high c-BN content thin films remain unchanged during annealing. And both intrinsic h-and c-BN thin-film VIS refractive indices are nearly temperature independent, at least up to 600°C. Therefore, RT BN optical constants can be used for feedback loop control in in situ thin-film growth at temperatures up to 600°C. ͓S0021-8979͑98͒07613-0͔

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Section: A In Situ Vis-se Investigationsmentioning

confidence: 99%

In situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures

Franke

Schubert

Hecht

et al. 1998

Journal of Applied Physics

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show abstract

“…Experimental data were fitted using a multilayer model consisting of air, a rough surface area, the thin film and glass. The line-shape of the dielectric function of the film was reconstructing using a three dimensional critical point [18]. The parameters associated with it (amplitude of the critical point, the threshold energy, the broadening and the excitonic phase angle) as well as the thickness of the sample were introduce as a variable, whose values were optimized via an iterative fitting procedure with respect to the raw ellipsometric data at multiple angles.…”

Section: Accepted M Manuscriptmentioning

confidence: 99%

An alternative fluorine precursor for the synthesis of SnO2:F by spray pyrolysis

2012

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“…First, the reflectance of the planar sample was higher than 30% over the measurement range. Typical peaks, attributed to the interband transitions, were observed around 250, 400, and 850 nm [17]. The reflectance of the porous sample was 20 to 30% lower than that of the reference sample.…”

Section: Formation Of Platinum/porous Inp Structuresmentioning

confidence: 83%

Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure

et al. 2012

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Temperature dependence of the interband critical-point parameters of InP

Cited by 228 publications

References 52 publications

In situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures

In situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures

An alternative fluorine precursor for the synthesis of SnO2:F by spray pyrolysis

Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure

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