Temperature dependence of theL6c−Γ6cenergy gap in gallium antimonide

Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb andGa1−xInxMuñoz1, Pollak2, Zakia3 et al. 2000Phys. Rev. B431170View full textAdd to dashboardCite

“…The analysis of Joullié et al 16 for E 0 (T) of GaSb consisted of only a linear fit between 100 and 300 K with a slope of Ϫ3.5ϫ10 Ϫ4 eV/K. Using this value and E 0 ͑300 K͒ ϭ0.72 eV, 17,19 the extrapolated number is E 0 (0) ϭ0.825 eV, which is the value frequently quoted in the literature.…”

“…17 However, E 0 (T) for direct gap semiconductors at low temperatures differs considerably from a straight line 11,12 and hence E 0 (0) has been overestimated by Ref. 16. Our value for this parameter, using both the Varshni and the Bose-Einstein-type equations, is E 0 (0)ϭ0.809 eV, which is in agreement with the value of 0.8099 eV obtained from photoluminescence measurements at 2 K. 28 The value of ␣͓(5.26Ϯ0.4)ϫ10 Ϫ4 eV/K͔ for E 0 in GaSb reported in this work is in good agreement with those presented by Hwang et al 19 (␣ϭ6.5ϫ10 Ϫ4 eV/K) and Iyer et al 18 Our values for ⌫ LO are considerable smaller than those reported previously for a number of III-V ͑GaAs, InGaAs͒ and II-VI ͓ZnSe, CdSe ͑cubic͒, ZnCdSe͔ zinc-blende-type semiconductors, except for two measurements of ⌫ LO ϭ7 -8 meV for GaAs.…”

“…15 However, in spite of its significance, few works on the temperature dependence of the fundamental band gap of GaSb have been reported and none for these quaternary compounds. An early study of E 0 (T) of GaSb was done by Joullié et al 16 using Schottky barrier electroreflectance between 30 and 300 K. However, the data were fit using only a linear term which produced an overestimation of the value of E 0 (0), which is frequently quoted in the literature. 17 There are reports of the temperature dependence of the higher lying transition E 0 ϩ⌬ 0 between 4 and 300 K ͑Ref.…”

Semiconductors

“…(Ohmic) drift mobility of electrons vs. temperature obtained with a time-of-flight technique in hyperpure material (open circles); other symbols: data from five references; solid line: theory[811]. (Ohmic) drift mobility of electrons vs. temperature obtained with a time-of-flight technique in hyperpure material (open circles); other symbols: data from five references; solid line: theory[811].…”

“…GaSb, EnergIes of electro reflectance peaks vs. temperature, Eg,d,,: dIrect r 8v -r 6e transition, L: indirect r 8v -Lbo transition, dotted line: r 8, -L6c gap obtained from L by subtracting the LA phonon energy of 17 me V[811] The maxima of the heavy hole bands are shifted in [111J-direction, that of the light GaSb.…”