Temperature dependence of the photoluminescence intensity of ordered and disordered In0.48Ga0.52P

Abstract

The integrated photoluminescence (PL) intensities of both ordered and disordered epilayers of InGaP grown on GaAs have been measured as a function of temperature. The highest PL efficiency occurs in the most disordered sample. We find that the PL intensities can drop from 2 to almost 4 orders of magnitude between 12 and 280 K. The samples show an Arrhenius behavior characterized by two activation energies. Below 100 K the activation energies lie in the region of 10–20 meV. Above 100 K the activation energy is approximately 50 meV except in the most disordered sample where it increases to 260 meV. We conclude that the low-temperature PL efficiency is most likely controlled by carrier thermalization from spatial fluctuations of the band edges followed by nonradiative recombination. At higher temperatures the PL efficiency is dominated by a nonradiative path whose characteristic activation energy and transition probability depend upon the degree of sublattice ordering.

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

“…Although the activation energies are uniquely determinated, using the expression ͑2͒, factors A and B are not uniquely determinated and must be interpreted with some caution. 32,34 However, they provide some indication of the relative efficiency of the two mechanisms within a given sample. We observed that the ratio of the number of nonradiative type A centers ͑high activation energy͒ to the number of type B centers ͑low activation energy͒ increases with increasing N concentration.…”

Physical Mechanisms of Photoluminescence of InGaAs(N) Alloy Films Grown by MOVPE

“…This behaviour corresponds to the thermal activated non-radiative recombination mechanism, where the slopes of the dotted line give the activation energy (DE). The PL emission (efficiency) can simply be described by a model involving nonradiative process [6], h(T) ¼ [1 þ (P nro /P r ) exp (ÀDE/k B T)] À1 , where k B is the Boltzmann constant, T is the sample temperature. P nro /P r is effectively the ratio of non-radiative to radiative recombination probability for the loss mechanism.…”

Exciton localization in MgxZnyCd1−x−ySe alloy

“…The PL intensity decreases with increasing temperature, indicating the presence of non-radiative recombination centres. The experimental data is fitted to a formula involving one non-radiative recombination process (dotted lines) [8]: I(T) = 1/(1 + (P NR /P R ) exp (-E A /k B T)), where P NR /P R is the ratio of the non-radiative to radiative recombination probability, T is the temperature, k B is the Boltzmann's constant, and E A is the activation energy. An increase in the thermal activation energy with increasing Mg content (from 24 meV for Zn 0.5 Cd 0.5 Se to 108 meV for Mg 0.53 Zn 0.27 Cd 0.2 Se) is observed.…”