Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells

Admittance spectroscopy measurements on AlInAs/GaInAs/AlInAs quantum well structures: Evidence of a deep level assisted tunneling

“…(13), the band offset ratio is then AE,/AEg = 0.74 f 0.04. Within the experimental errors, this value agrees with that given in the literature (3,13,14). Once more, admittance spectroscopy technique shows its ability for the determination of the band gap discontinuities.…”