1996
DOI: 10.1063/1.362039
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Temperature dependence of the pinning field and coercivity of NiFe layers coupled with an antiferromagnetic FeMn layer

Abstract: The pinning field Hp (the amount of the shift of the hysteresis loops) and the coercivity Hc of the samples of the form glass/Ta 120 A/(Cu 100 A)/NiFe 75 A/FeMn 150 A/Ta 50 A increase almost linearly with decreasing temperature down to 20 K, below which Hc increases sharply. The observed strong positive correlation between Hp and Hc, seems to be reasonably explained by a combination of a newly developed model in which a directional distribution of the pinning field caused by a random distribution of the crysta… Show more

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Cited by 39 publications
(16 citation statements)
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“…This asymmetry results in a reduction of the exchange bias. Our results are in good qualitative agreement with experimental ones [22][23][24][25][26], where an exchange bias was not found in the Fe/FeF 2 (100) system even though the FeF 2 (100) orientation possesses uncompensated spins at the interface. Therefore, domain wall formation in AFM systems is a good candidate to explain the zero exchange bias in experiments.…”
Section: Resultssupporting
confidence: 81%
See 1 more Smart Citation
“…This asymmetry results in a reduction of the exchange bias. Our results are in good qualitative agreement with experimental ones [22][23][24][25][26], where an exchange bias was not found in the Fe/FeF 2 (100) system even though the FeF 2 (100) orientation possesses uncompensated spins at the interface. Therefore, domain wall formation in AFM systems is a good candidate to explain the zero exchange bias in experiments.…”
Section: Resultssupporting
confidence: 81%
“…This is evidence that blocking temperature is partly related to interface roughness. Interestingly, a peak of coercivity occurs at the so-called blocking temperature when the exchange bias field becomes zero, qualitatively consistent with experimental results [22][23][24][25][26]. Fig.…”
Section: Resultssupporting
confidence: 77%
“…The temperature dependence of H C for ZnF 2 ͞Fe͞Al, also in It is interesting that in both cases the H C enhancement below T N does not saturate at low temperatures, despite the fact that H E reaches a temperature independent value (presumably this reflects the saturation of the AF sublattice magnetization and anisotropy [13]). Such behavior in H E and H C has been observed in several systems (e.g., [4][5][6][14][15][16]) and appears to be a common phenomenon. It seems clear that this behavior warrants further study.…”
mentioning
confidence: 98%
“…[293]) and H e and T B are sizedependent, which is emphasized in this section. Besides, H e and T B are also functions of AFM orientation (compensated versus uncompensated AFM surface [298][299][300][301][302][303] and in-plane versus out-of-plane AFM spins [298,299,302]), of FM/AFM interface disorder (roughness [299,301,302,[304][305][306], crystallinity [307,308], grain size [309,310], of interface impurity layers [311]), and of strain effect [312][313][314], of stoichiometry [293] or of presence of multiple phases [315] and so forth.…”
Section: Exchange Bias In Fm/afm Heterostruc-turesmentioning
confidence: 99%