Temperature Dependence of the Resistance of AlGaN/GaN Heterostructures and their Applications as Temperature Sensors

Zahmani, Abdeldjelil Habib; Nishijima, Akira; Morimoto, Yuka; Wang, H.; Li, J. F.; Sandhu, Adarsh

doi:10.7567/ssdm.2009.p-6-9

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2016

Publication Types

Select...

Other1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…in [5] and [6], however its temperature dependence is non-linear. A lookup table or a more complex model has to be used for the signal interpretation.…”

Section: Introductionmentioning

confidence: 94%

Linear temperature sensors in high-voltage GaN-HEMT power devices

Reiner

Waltereit

Weiss

et al. 2016

2016 IEEE Applied Power Electronics Conference and Exposition (APEC)

View full text Add to dashboard Cite

This work presents a high-voltage GaN-based power HEMT with a highly-linear, monolithically-integrated temperature sensor. The principle is shown and compared to other concepts. The sensor is fabricated by using a interconnect metallization without additional process steps. The performance of the sensor as well as of the power device is characterized. The 600 V power device achieves an on-state resistance of RON = 55 mO at a corresponding drain current ID = 30 A and an advanced dynamic performance with a low gate charge of 20 nC

show abstract

“…in [5] and [6], however its temperature dependence is non-linear. A lookup table or a more complex model has to be used for the signal interpretation.…”

Section: Introductionmentioning

confidence: 94%