Temperature dependence of thermal expansion of ceramics and metals for electronic packages

Chanchani, R.; Hall, P. M.

doi:10.1109/33.62588

Cited by 40 publications

(9 citation statements)

References 8 publications

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“…• A CCD subcarrier made of a structured aluminum nitride (AlN) high temperature co-fired ceramic (HTCC) AlN has been selected as a package material due to its excellent match in terms of coefficient of thermal expansion (CTE) to silicon [18] (see Fig. 5) as it is the ultimate requirement of the FPA design not to stress the detectors.…”

Section: Materials Selectionmentioning

confidence: 99%

An innovative concept for the AsteroidFinder/SSB focal plane assembly

et al. 2012

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This paper gives a summary on the system concept and design of the focal plane assembly of AsteroidFinder/SSB, a small satellite mission which is currently under development at the German Aerospace Center (DLR). An athermal design concept has been developed in accordance to the requirements of the instrument and spacecraft. Key aspects leading to this approach have been a trade-off study of the mechanical telescope interface, the definition of electrical and thermal interfaces and a material selection which minimizes thermally induced stresses. As a novelty, the structure will be manufactured from a machinable AlN-BN composite ceramic. To enable rapid design iterations and development, an integrated modeling approach has been used to conduct a thermo-mechanical analysis of the proposed concept in order to prove its feasibility. The steady-state temperature distribution for various load cases and the resulting stress and strain within the assembly have both been computed using a finite element simulation.Comment: 12 pages, 7 figure

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Section: Materials Selectionmentioning

confidence: 99%

An innovative concept for the AsteroidFinder/SSB focal plane assembly

et al. 2012

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“…The fiber position is not fixed until the temperature drops below 183 , because the ferrule moves even if the fiber is located at the exact geometric center of the ferrule at 223 . According to thermal expansion theory [16], the linear shrinkage relationship of a long thin rod can be reasoned as (3) where denotes the factional change in length, represents the original length, is the thermal expansion coefficient, and denotes the change in temperature. Substituting values for each term in (3) allows the shrinkage of the heater stage to be calculated.…”

Section: B Platform Error Compensationmentioning

confidence: 99%

Active fiber-solder-ferrule alignment method for high-performance opto-electronic device packaging

Tseng

Chang

2003

IEEE Trans. Comp. Packag. Technol.

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In optical communication systems, the transceivers, including both transmitters and receivers, are the key components of system quality and bandwidth. Fiber-solder-ferrule (FSF) assembly has been widely adopted in packaging high performance transceivers such as dual-in-line package and butterfly package. the flexibility and size of the fiber and ferrule, traditional FSF packaging process is done manually and the average accuracy of the fiber position is around 80 m. In this case, approximately 1 out of 5 FSF assemblies will have an accuracy of less than 20 m, which past research shows is sufficient to maintain 90% coupling efficiency of the optoelectronic devices. This study proposes a novel method for automating the fiber-solder-ferrule packaging process based on thorough system analysis. Finally, a packaging system is developed to improve the accuracy of the fiber position to up to 20 m.Index Terms-Active alignment, fiber alignment shift, laser module packaging, optoelectronics.

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“…and Invar tube of the Invar housing materials with very low CTE were chosen to minimize the thermal stresses and strains. 12,13 In a DIP construction, the fiber-to-Invar tube and the submount-to-Invar plate assemblies were solder joints, while the Invar tubeto-u-channel and the u-channel-to-Invar plate assemblies were weld joints. In this study of the laser welding process, solder joints for good adhesion and weld joints for high strength in the same housing materials are both essential for ensuring good reli- …”

Section: Laser Package Constructionmentioning

confidence: 99%

The principle cause of crack defects in optoelectronic materials with phosphorus-containing underlayer

Cheng

Sheen

Kuang

et al. 1999

Journal of Elec Materi

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The principle cause of cracks in laser-welded, Au-coated, optoelectronic materials with a phosphorus (P)-containing underlayer is studied experimentally and numerically modeled. Experimental results find that the crack formation is due to the existence of a P-containing underlayer and is not due to the thickness of the Au plating layer. The P-containing underlayer introduced by a electroless plating process may generate a low melting, P-rich segregation layer during solidification. A finite-element method analysis is performed to evaluate the residual stresses variation of the low melting P-rich segregation layer. Results show that the high residual tensile stresses of the P-rich segregation layer are generated by solidification shrinkage. A crack may be initiated by this residual stress. Both experimental observations and numerical calculations indicate that the crack formation mechanism in laser-welded Au-coated optoelectronic materials is directly related to the low melting P-rich segregation layer and its associated high tensile stresses. Based on these results, a Ni underlayer with Pfree electroplating, instead of P-containing electroless plating, should be used prior to plating Au on optoelectronic materials to prevent crack formation in laser welded Au-coated optoelectronic materials.

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Temperature dependence of thermal expansion of ceramics and metals for electronic packages

Cited by 40 publications

References 8 publications

An innovative concept for the AsteroidFinder/SSB focal plane assembly

An innovative concept for the AsteroidFinder/SSB focal plane assembly

Active fiber-solder-ferrule alignment method for high-performance opto-electronic device packaging

The principle cause of crack defects in optoelectronic materials with phosphorus-containing underlayer

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