Temperature dependence of tunnel magnetoresistance in serial magnetic tunnel junctions

Abstract

Magnetic tunnel junctions have been widely used in various applications, such as magnetic sensors and magnetic random-access memories. In the practical application of MTJs, they are usually used in series toward high sensitivity and high stability, especially for sensor applications. In this paper, serial MTJs devices on 8 in. wafers were fabricated. The temperature dependence of the tunnel magnetoresistance ratio, resistances in parallel and antiparallel configurations, and dynamic conductance were systematically investigated. The results of serial MTJs devices are consistent with a single MTJ device. This research suggests that serial MTJs can be directly used to investigate the magnetic tunneling properties of MTJ stacks.

Non-uniform superlattice magnetic tunnel junctions

“…Unfortunately, as we move towards higher energies, the ratio of the A PC /A APC gets reduced (figure B1(a)), which in turn declines the TMR%. Although earlier works have ascribed the TMR roll-off with temperature to the magnons [65,[67][68][69], the same can also be explained by the analysis of the spin-dependent transmission spectra within the FW. The TMR of the Nu-SLTJs exhibits notable robustness to temperature variations.…”

“…The TMR of a CoFeB/MgO/CoFeB-based MTJ has typically been observed to show a monotonic decline with the temperature [65,66]. In figure 17 we have shown the TMR dependence of the Nu-SLTJs in reference to a typical MTJ.…”

Review—Potential of Tunneling Magnetoresistance Coupled to Iron Oxide Nanoparticles as a Novel Transducer for Biosensors-on-Chip

“…Zhao, et al observed a decrease of TMR ratio from 150 to 105% with the increasing temperature of 10 to 400 K. 62 Two effects can be used to explain this finding. There is more magnetic disorder when the temperature goes up, which makes R AP go down and R P go up.…”