Temperature dependence of two-dimensional hole gas on hydrogen-terminated diamond surface

Yang, Mingyang; Yuan, Qilong; Qiu, Mengting; Jia, Zhenglin; Yang, Guoyong; Nishimura, Kazuhito; Lin, Cheng-Te; Sun, Xiaoyan; Jiang, Nan; Hu, Youwang

doi:10.1016/j.diamond.2023.110414

Cited by 3 publications

(1 citation statement)

References 49 publications

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“…Diamond is grown by CVD in a hydrogen rich plasma environment. After the growth, because of the plasma, hydrogen atoms can remain at the diamond surface for a while [17]. This hydrogen-terminated surface exhibits a lower resistance compared to the others as expected for a lightly boron-doped diamond.…”

Section: Electrical Characterizationmentioning

confidence: 73%

Spectral and microstructural analysis of the effect of the Ga⁺ implantation on diamond: a CL-EELS study

Valendolf,

Piñero,

Lloret

et al. 2024

Nanotechnology

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Due to its capacity to achieve nanometer-scale machining and lithography, focused ion beam (FIB) is an extended tool for semiconductor device fabrication and development, in particular, for diamond-based devices. However, some technological steps are still not fully optimized for its use. Indeed, ion implantation seems to affect the crystalline structure and electrical properties of diamond. For this study, a boron-doped ([B] ~ 1017 atoms·cm-3) diamond layer grown by CVD was irradiated using Ga+ by FIB, with 1nA current and 5, 20, and 30 keV of acceleration voltage. The Ga+ implanted diamond layer has been analysed through cathodoluminescence (CL) and scanning transmission electron microscopy (STEM)-related techniques. The beam penetration depth has been simulated by Monte Carlo calculations of both Ga+ (FIB) and e- (CL) beams at different energies. The comparative CL analysis of the layer as-grown and after implantation revealed peaks related to defects, such as A band, H3 center, and defects present in the green band region. The STEM studies for the 30 keV implanted sample showed that the diamond lattice is affected by the damage, evidencing amorphisation in the layer with a sp2/sp3 ratio of 1.37, estimated by EELS. Therefore, this study highlights the effects of the Ga+ implantation on the optical and structural characteristics of diamond, using different methods.

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Section: Electrical Characterizationmentioning

confidence: 73%

Spectral and microstructural analysis of the effect of the Ga⁺ implantation on diamond: a CL-EELS study

Valendolf,

Piñero,

Lloret

et al. 2024

Nanotechnology

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Achieving ultrahigh hole mobility in hydrogen-terminated diamond via boron nitride modifications

Yang,

Hu,

Cui

et al. 2024

Diamond and Related Materials

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Dft Study of Structural and Electronic Properties of Diamond (100) Surface as a Function of Surface Coverage of Atmospheric Functional Groups

Neupane,

Cruz,

Gomez

et al. 2024

Preprint

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Temperature dependence of two-dimensional hole gas on hydrogen-terminated diamond surface

Cited by 3 publications

References 49 publications

Spectral and microstructural analysis of the effect of the Ga⁺ implantation on diamond: a CL-EELS study

Spectral and microstructural analysis of the effect of the Ga⁺ implantation on diamond: a CL-EELS study

Achieving ultrahigh hole mobility in hydrogen-terminated diamond via boron nitride modifications

Dft Study of Structural and Electronic Properties of Diamond (100) Surface as a Function of Surface Coverage of Atmospheric Functional Groups

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Temperature dependence of two-dimensional hole gas on hydrogen-terminated diamond surface

Cited by 3 publications

References 49 publications

Spectral and microstructural analysis of the effect of the Ga+ implantation on diamond: a CL-EELS study

Spectral and microstructural analysis of the effect of the Ga+ implantation on diamond: a CL-EELS study

Achieving ultrahigh hole mobility in hydrogen-terminated diamond via boron nitride modifications

Dft Study of Structural and Electronic Properties of Diamond (100) Surface as a Function of Surface Coverage of Atmospheric Functional Groups

Contact Info

Product

Resources

About

Spectral and microstructural analysis of the effect of the Ga⁺ implantation on diamond: a CL-EELS study

Spectral and microstructural analysis of the effect of the Ga⁺ implantation on diamond: a CL-EELS study