Temperature dependence of universal conductance fluctuation due to development of weak localization in graphene

Terasawa, D.; Fukuda, Akira; Fujimoto, Akira; Ohno, Yasuhide; Matsumoto, Kazuhiko

doi:10.1016/j.ssc.2017.09.002

Cited by 6 publications

(5 citation statements)

References 33 publications

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“…These behaviors indicate that the transmission fluctuation relating to the conductance fluctuation are suppressed as T increases regardless of the transport regime, which is consistent with the previous experimental studies on individual SWCNTs 31) and other low-dimensional materials. [32][33][34] Finally, we examined the quantum decoherence of z á ñ from another perspective. In our previous work, 21) we proposed a method to evaluate the quantum decoherence by dividing z á ñ into a coherent component z á ñ coh and an incoherent component z á ñ inc as z z z á ñ = á ñ + á ñ coh inc .…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Suppression of conductance fluctuation of disordered carbon nanotubes caused by thermal atomic vibration

Ishizeki¹,

Takashima²,

Sasaoka³

et al. 2020

Jpn. J. Appl. Phys.

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We have numerically succeeded in evaluating the conductance fluctuations of nitrogen-doped single-walled carbon nanotubes (N-SWCNTs), as a typical example of disordered quasi-one-dimensional materials, including the effect of thermal atomic vibration from the viewpoint of conductance histograms. We show that conductance histograms even of N-SWCNTs with over 100 nm length are described by a log-normal distribution function at tens of kelvins, which suggests that the N-SWCNTs shows localization at low temperature. On the other hand, conductance of the N-SWCNT are no longer described by a log-normal distribution function at hundreds of kelvins. Instead, the histograms are described by a Gaussian distribution function, which indicates that the N-SWCNTs definitely deviate from localization regime. In addition, we confirm that the conductance fluctuations of the N-SWCNTs are also suppressed as the temperature increases because of delocalization due to quantum decoherence caused by thermal atomic vibration.

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Section: Simulation Results and Discussionmentioning

confidence: 99%

Suppression of conductance fluctuation of disordered carbon nanotubes caused by thermal atomic vibration

Ishizeki¹,

Takashima²,

Sasaoka³

et al. 2020

Jpn. J. Appl. Phys.

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“…( 6), we obtain the phase-coherence length L φ ≈ 0.46 µm, which is in agreement with literature of monolayer graphene with mobility µ ≈ 10 3 cm 2 /Vs, Refs. [25,[47][48][49][50]. We make a direct comparison between the CPD results of a monolayer graphene and those from the Ref.…”

Section: Chirality Fingerprints Underlying Experimental Signalsmentioning

confidence: 99%

Conductance Peak Density in Disordered Graphene Topological Insulators

Sá¹,

Barbosa²,

Ramos³

2020

Preprint

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We investigate the universal properties of quantum transport in graphene nanowires that engender subtle universal conductance fluctuations. We present results for three of the main microscopic models that describe the sublattice of graphene and generate, as we shall show, all the chiral universal symmetries. The results are robust and demonstrate the widely sought sign of chirality even in the regime of many open channels. The fingerprints paves the way to distinguish systems with sublattice symmetry such as topological insulators from ordinary ones by an order of magnitude. The experimental realization requires a single measurement of the chaotic fluctuations of the associated valleytronics conductante. Through the phase coherence length, our theoretical predictions are confirmed with the data from traditional measurements in the literature concerning quantum magnetotransport.

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“…We also use this Ti‐cleaning on a correlation analysis method between the wavenumber shifts of the G and 2D Raman mode . Magneto‐transport is a powerful tool for examining the disorder effects and electrical characteristics of 2D electron systems such as graphene . Recently, we investigated the relationship between intervalley scattering and universal conductance fluctuations in graphene, and gas adsorption on the surface of graphene, by means of magneto‐transport.…”

Section: Introductionmentioning

confidence: 99%

“…Magneto‐transport is a powerful tool for examining the disorder effects and electrical characteristics of 2D electron systems such as graphene . Recently, we investigated the relationship between intervalley scattering and universal conductance fluctuations in graphene, and gas adsorption on the surface of graphene, by means of magneto‐transport. Furthermore, by examining the temperature dependence of the carrier concentration through Hall measurements, we estimate the strength of the disorder potential for CVD single‐layer graphene and compare it to the case of epitaxial graphene.…”

Section: Introductionmentioning

confidence: 99%

Disorder and Weak Localization near Charge Neutral Point in Ti‐cleaned Single‐Layer Graphene

Fujimoto

Perini²,

Terasawa³

et al. 2019

Physica Status Solidi (b)

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The charge neutral point (CNP) for chemical-vapor-deposited (CVD) graphene appears at relatively high back-gate voltages (V G ) because of molecular adsorption and impurities on the graphene surface. Potential fluctuations due to these disorders strongly affect transport properties when the Fermi level approaches the Dirac point. In this work, a Ti-cleaning process is used to shift the CNP of the transferred graphene surface to a lower V G . The effectiveness of charge doping due to Ti-cleaning is also investigated through Raman scattering measurements. From the temperature dependence of the carrier concentration, the strength of the disorder potential for the CVD single-layer graphene is estimated. The quadratic increase in the carrier concentration with temperature agrees with the theoretical prediction, which considers intrinsic thermal excitation combined with electron-hole puddles. Furthermore, based on weak localization (WL) analysis, the inelastic scattering length (L ϕ ) decreases with temperature because of electron-electron interactions. The L ϕ also decreases near the CNP because of inhomogeneous charge distributions such as electron-hole puddles.

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Temperature dependence of universal conductance fluctuation due to development of weak localization in graphene

Cited by 6 publications

References 33 publications

Suppression of conductance fluctuation of disordered carbon nanotubes caused by thermal atomic vibration

Suppression of conductance fluctuation of disordered carbon nanotubes caused by thermal atomic vibration

Conductance Peak Density in Disordered Graphene Topological Insulators

Disorder and Weak Localization near Charge Neutral Point in Ti‐cleaned Single‐Layer Graphene

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