2002
DOI: 10.1016/s1359-6454(02)00004-6
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Temperature dependence of Young's modulus in Si3N4-based ceramics: roles of sintering additives and of SiC-particle content

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Cited by 48 publications
(20 citation statements)
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“…However, relative to SiN:H, the high-k dielectrics exhibit more comparable values, with the PEALD AlN film exhibiting nearly the same value as that for the specific SiN:H film selected for comparison in this study. This is consistent with the fact that single-crystalline and poly-crystalline Si 3 262,263 GPa, respectively, that depends on both crystal orientation and polytype. We also note that the values of Young's modulus and hardness for PECVD and LPCVD SiN:H have been reported to range from 100-280 GPa and 13-27 GPa, respectively, depending on the exact growth conditions and hydrogen content.…”
supporting
confidence: 88%
“…However, relative to SiN:H, the high-k dielectrics exhibit more comparable values, with the PEALD AlN film exhibiting nearly the same value as that for the specific SiN:H film selected for comparison in this study. This is consistent with the fact that single-crystalline and poly-crystalline Si 3 262,263 GPa, respectively, that depends on both crystal orientation and polytype. We also note that the values of Young's modulus and hardness for PECVD and LPCVD SiN:H have been reported to range from 100-280 GPa and 13-27 GPa, respectively, depending on the exact growth conditions and hydrogen content.…”
supporting
confidence: 88%
“…The transition temperature from slow to fast modulus degradation in Si 3 N 4 has been shown to depend on the amount and type of sintering additives used for its processing. 16 Additives deposit at the grain boundaries, determining their strength, which is obviously related to the temperature for the activation of the sliding. The yield stress for this Si 3 N 4 , determined from FEM as described in the previous section, is shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…However, this intensive mechanical characterization has been limited to either room temperature [4][5][6] or high temperatures within the creep regime. [7][8][9][10] The information available at intermediate temperatures is still very scarce -indeed limited to elastic property evaluations by dynamic measurements [11][12][13][14][15][16] -despite the fact that it is within this temperature range where silicon nitride has to work in most practical applications.…”
Section: Introductionmentioning
confidence: 99%
“…By applying the conventional method normally used in thermal expansion experiments, a transition temperature ( ), from the E(T) and G(T) curves of 648 K, is found. At this temperature, the slope dE/dT ( ) is -89 MPa/K, a value close to that of window glass (-97), 14) much higher than that of glycerol (-191) 15) but much lower than that of a Pd-based BMG (-40), 9) giving this Zr-based BMG a « medium fragile » behaviour. This rapid transition (+45% for B, +15% for E, G and ν), corresponds to the first crystallisation process, and starts at temperature ~708 K. It is then followed by a quasi plateau for E and G, (B and ν decrease by 18% and 12%) which extends until the second crystallisation process starts at ~813 K. Here another strong increase of stiffness starts and lasts for 50 K (26% in E and G, 37% in B and 10% in ν), then B and ν drop again.…”
Section: Resultsmentioning
confidence: 61%