Temperature dependence studies of Er optical centers in GaN epilayers grown by MOCVD

Abstract

We report the temperature dependence of Er optical centers in GaN epilayers prepared by metal-organic chemical vapor deposition under the resonant excitation (4I15/2 → 4I9/2) excitation using a Ti:Sapphire laser (λexc = 809 nm). High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN have been performed to identify the crystal filed splitting of the first excited state, 4I13/2. Here, we have employed a simple approach to determine activation energies which are related to the thermal population of electrons from the lowest level to the higher level of the crystal field splitting of the first excited state.

Telecommunication-Wavelength Lasing in Er-doped GaN Multiple Quantum Wells at Room Temperature

“…In this work, a set of 200-period Er-doped GaN/AlN multiple quantum wells (MQWs:Er) produced a significant improvement of the quantum efficiency of the 1.5 µm emission via carrier quantum confinement and strain engineering. A detail description of the growth process and epilayer structure has been reported previously [13][14][15][16][17].…”