Temperature dependency and linearity assessment of dual-metal gate stack junctionless accumulation-mode cylindrical surrounding gate (DMGS-JAM-CSG) MOSFET

Abstract

A physics-based temperature-dependent analytical model for a Dual-Metal Gate Stack Junctionless Accumulation-Mode Cylindrical Surrounding Gate (DMGS-JAM-CSG) MOSFET has been presented in this paper by solving the 2D Poisson's equation utilizing the suitable boundary conditions. The device performance is examined at various temperatures (T=100K, 300K and 500K) by observing several parameters like potential, electric field, electron concentration and electron velocity. The obtained outcomes are also contrasted with the outcomes acquired after simulation. Further, the device is also analyzed for its analog performance. Lastly, to check the relevancy of the device for RFIC applications, linearity assessment is performed by evaluating its several figure of merits (FOMs) like second-order and third-order Voltage Intercept Points (VIP2, VIP3), third-order Intercept Input Power (IIP3), third-order Intermodulation Distortion (IMD3) and various higher order transconductances. The obtained results are contrasted with an analogous device and it is discovered that DMGS-JAM-CSG MOSFET device acquires better electrical and linearity characteristics. ATLAS 3D device simulator has been utilized to conduct the simulations.

Impact of temperature variation on linearity parameters of nanotube surrounding gate (NT‐SG) MOSFETs

“…The device with greater VIP2 and VIP3 values exhibits a higher degree of device linearity. Mathematically, VIP2 and VIP3 26,27 are denoted by – with the rise in temperature range from 300 to 500 K, VIP2 and VIP3 exhibit better linearity performance at maximum temperature of the device.…”

“…The device with greater VIP2 and VIP3 values exhibits a higher degree of device linearity. Mathematically, VIP2 and VIP3 26,27 are denoted by -…”