Temperature-dependent ac conductivity and dielectric response of vanadium doped CaCu3Ti4O12 ceramic

Sen, A.; Maiti, Uday Narayan; Thapa, Ranjit; Chattopadhyay, Kalyan Kumar

doi:10.1007/s00339-011-6382-4

Cited by 14 publications

(8 citation statements)

References 30 publications

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“…To clarify the origin of their giant dielectric properties, the related electrical properties of CCTO ceramics have been intensively studied. It is clear that CCTO ceramics are electrically heterogeneous, consisting of insulating grain boundaries (GBs) and semiconducting grains [2][3][4][5][6][7][8][9][10][11][12]. However, the mechanism related to the origin of the n-type semiconductivity of grain interiors is still unclear.…”

Section: Introductionmentioning

confidence: 98%

“…As a result, the investigations of electrical properties of grains and GBs [2][3][4][5][6][7][8][9][10][11][12], especially the elegant investigation of Chung et al [3], it is now widely accepted that giant ε response in CCTO ceramics is mainly attributed to an internal barrier layer capacitor (IBLC) effect. This results from semiconducting properties of grain interiors and insulating layers of GBs.…”

Section: Introductionmentioning

confidence: 98%

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Electrical responses and dielectric relaxations in giant permittivity NaCu3Ti3TaO12 ceramics

et al. 2012

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Dielectric relaxations and electrical responses in NaCu 3 Ti 3 TaO 12 ceramics were investigated as a function of temperature. NaCu 3 Ti 3 TaO 12 ceramics exhibit giant dielectric constants with values of ε ∼ 1.45-2.08 × 10 4 . Two sets of thermally activated dielectric relaxations were observed in low and high temperature ranges. Sintering conditions have an insignificant influence on the microstructure of NaCu 3 Ti 3 TaO 12 ceramics, and have a slight impact on their ε values. Thermally activated electrical responses of grains and grain boundaries have been studied at different temperatures by using complex admittance and impedance spectroscopy analyses, respectively. The low temperature relaxation mechanism is found to correlate closely with electrical response of semiconducting grains; whereas the apparent high ε values are attributed to electrical response of insulating grain boundaries. These results support the internal barrier layer capacitor model to explain the giant dielectric properties of NaCu 3 Ti 3 TaO 12 ceramics. Additionally, high temperature relaxation may be attributed to the sampleelectrode effect and/or defect ordering. N. Sangwong · W. Somphan · P. Thongbai ( ) Materials Science and Nanotechnology Program,

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 98%

Electrical responses and dielectric relaxations in giant permittivity NaCu3Ti3TaO12 ceramics

et al. 2012

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“…CaCu 3 Ti 4 O 12 (CCTO) shows an unusual variation of perovskite structure. Having pseudo perovskite crystal structure, CCTO has attracted considerable considerable interest due to its colossal dielectric permittivity at room temperature (≈ 10 4 -10 6 ), which remains almost constant over a wide temperature and frequency range [1][2][3][4]. Practical applications of CCTO based systems can enhance the performance and miniaturization of microelectronic devices by virtue of its excellent dielectric Microwave processing of ceramics is very attractive technique for material synthesis because of its advantages like very fast heating, increased densification, decreased sintering activation energy, improved microstructure, selective heating, non-contact heating, grain growth inhibition, energy and cost savings compared to conventional processing of electroceramics etc.…”

Section: Introductionmentioning

confidence: 99%

“…Among the non-destructive material characterizations, complex impedance spectroscopy (CIS) has been frequently used to probe into microscopic level and explore the different mechanisms behind the dielectric and electrical properties of materials. In polycrystalline ceramics, electrical responses usually arise from: i) grain or bulk, ii) grain boundary and iii) sample electrode interface [2,15]. For the sake of simplicity, each response can be considered as a parallel combination of R (resistance) and C (capacitance).…”

Section: Introductionmentioning

confidence: 99%

“…As a whole, one can think of three parallel R-C circuits connected in series. In the Cole-Cole impedance plot, each parallel R-C circuit corresponds to semicircular arc having centre on the real impedance (Z ′ ) axis for single relaxation time [2]. High frequency arc corresponds to grain and successive arcs towards lower frequency region represent the contribution of grain boundary and sample-electrode interface, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Giant dielectric response in microwave processed CaCu3Ti4O12 ceramics: A correlation among microstructure, dielectric and impedance properties

Samanta

Nanda

Kumar

et al. 2019

PAC

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Polycrystalline CaCu 3 Ti 4 O 12 (CCTO) ceramics was synthesized by microwave assisted solid-state reaction. Effect of sintering at different temperatures on the crystal structure, dielectric and impedance properties was investigated in detail. Rietveld analysis of X-ray diffraction data identified that crystal structure was a mixture of cubic CCTO and monoclinic CuO phases. Lattice parameters and amount of CuO secondary phase were also estimated as a function of sintering temperature. Microstructural investigation confirmed the existance and successive increase of the melted phase near the grain boundary region with increasing temperature of sintering. Cu-rich nature of the melted phase was further confirmed by selective area EDX spectra. Dielectric and impedance properties were studied as a function of frequency (100 Hz to 1 MHz) and temperature (room temperature to 300°C). Improvement in dielectric properties as a function of sintering temperature (1000 to 1050°C) was explained in terms of reduction in grain boundary dimension due to the successive increase in Cu-rich melted phase. However, dielectric constant started falling when sintered at 1075°C, which may be accounted in terms of segregation of large amount of CuO phase after a certain temperature and hence a non-stoichiometry of Cu in CCTO lattice. Impedance data were modelled by equivalent electrical circuits to investigate different contributions of electrically heterogeneous systems. In addition, probable relaxation mechanism has been discussed on the basis of impedance and modulus data. Activation energies were calculated from different characterizations and a non-Debye-type relaxation phenomena were observed. In this work, an attempt is made to build up a correlation among synthesis procedure, sintering temperature, dielectric, impedance and microstructural properties.

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Dielectric, ac-impedance and modulus spectroscopic studies of nano-crystalline Bi0.5Na0.5TiO3 synthesized by using one pot glycine assisted solution combustion from inexpensive TiO2

Singh

Kim

Singh

et al. 2014

J Mater Sci: Mater Electron

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Temperature-dependent ac conductivity and dielectric response of vanadium doped CaCu3Ti4O12 ceramic

Cited by 14 publications

References 30 publications

Electrical responses and dielectric relaxations in giant permittivity NaCu3Ti3TaO12 ceramics

Electrical responses and dielectric relaxations in giant permittivity NaCu3Ti3TaO12 ceramics

Giant dielectric response in microwave processed CaCu3Ti4O12 ceramics: A correlation among microstructure, dielectric and impedance properties

Dielectric, ac-impedance and modulus spectroscopic studies of nano-crystalline Bi0.5Na0.5TiO3 synthesized by using one pot glycine assisted solution combustion from inexpensive TiO2

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