Temperature-Dependent Access Resistances in Large-Signal Modeling of Millimeter-Wave AlGaN/GaN HEMTs

Zhao, Xiaodong; Xu, Yuehang; Wu, Yunqiu; Xu, Ruimin; Li, Jingqiang; Hu, Zhifu; Wu, Hongping; Dai, Wenyu; Cai, Shujun

doi:10.1109/tmtt.2017.2658561

Cited by 37 publications

(36 citation statements)

References 29 publications

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“…18. The temperature-dependent coefficients of the parasitic resistances as well as the intrinsic elements are achieved.…”

Section: High Frequency Noise Model Theory and Modelmentioning

confidence: 99%

“…16 In this case, it is essential to take the temperature-dependent characteristics of noise model paramz E-mail: yuehangxu@uestc.edu.cn eters into consideration. 17,18 In terms of the application of LNA-PA, investigation on the effects of temperature-dependent parasitic resistances including R s and R d on high frequency noise of the device become particularly essential. Much effort has been put on the effect of temperature-dependent R s and R d on output characteristics in recent years.…”

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confidence: 99%

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High Frequency Noise Model of AlGaN/GaN HEMTs

Mao

et al. 2017

ECS J. Solid State Sci. Technol.

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Compared with conventional GaAs HEMTs, the larger gate leakage current and more obviously self-heating effects are two unique macroscopic features in AlGaN/GaN HEMTs. This paper presents the study of the effects brought by temperature-dependent R s and R d on noise performance of AlGaN/GaN HEMT. Based on these studies, a noise model up to 35GHz is established. An improved PRC model is proposed and the noise parameters NF min , R n and opt in the frequency band ranging from 0.1GHz to 35GHz is investigated. The effects brought by gate leakage current have been taken into consideration. Then, noise performance under different ambient temperature has been studied based on the high frequency noise model mentioned above. The parameters in the model except the parasitic inductors and capacitors are all temperature-dependent. With the model, the effects brought by temperature-dependent R s and R d have been studied under four different temperatures by comparing the noise performance in two different conditions. Results show that the temperature-dependent characteristics of these two parasitic resistances will have an effect on NF min and R n while little effect on opt . © The Author Nowadays, the wide bandgap semiconductor device-AlGaN/GaN high electron mobility transistors (HEMTs) have become popular in radar and wireless communication applications. Their advantages including higher output power, efficiency and operating frequency over other devices and their ability in terms of operating in extreme environment have drawn lots of attentions.1 Besides, they are also excellent candidates for the design of low noise amplifier in the perspective of low noise amplifier-power amplifier (LNA-PA). Recently, low noise amplifier based on AlGaN/GaN HEMTs which can provide 18.22dB gain at 2.6GHz while the noise figure is only 0.34dB has been reported.2 Also, LNA design in millimeter wave frequency band will become a focus issue in the age of 5G communication. 3Normal LNA design is based on massive noise measurement which will induce a lot of cost and longer design period. Under this situation, it's essential to establish noise models to reduce the cost and enhance the efficiency of LNA design. Several work has been done in the past few decades revolving around noise modeling. Besides the conventional noise model such as Pucel's model, 4 Pospieszalski model 5 and Fukui model, 6 many other novel modeling techniques including physical base noise models 7 have sprung up. However, the frequency band of model cannot reach up to millimeter wave in most cases. [8][9][10][11][12] Under this circumstance, many noise characteristics in high frequency band especially in millimeter wave can't be investigated.Apart from the modeling technique itself, several novel characteristics especially the gate leakage current effect and the electro-thermal characteristics in noise performance have drawn lots of attention. The gate leakage current is one of the hot topics as a result of its great effect on output characteristics of transistors. 13 In Ref. ...

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“…18. The temperature-dependent coefficients of the parasitic resistances as well as the intrinsic elements are achieved.…”

Section: High Frequency Noise Model Theory and Modelmentioning

confidence: 99%

mentioning

confidence: 99%

High Frequency Noise Model of AlGaN/GaN HEMTs

Mao

et al. 2017

ECS J. Solid State Sci. Technol.

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“…The source ( R s ) and drain ( R d ) access resistances, who connect the intrinsic part of the device to the external environment, are very important parameters for small‐signal and large‐signal modeling of GaN HEMTs. However, as the access resistances are bias‐ and temperature‐dependent, most of the published papers related to small signal parameter extraction applied to GaN HEMTs ignore this bias‐ and temperature‐dependency and only utilize the constant values of R s and R d at ambient temperature to extract the intrinsic elements, which will lead to unphysical and unreliable values of the access resistances and intrinsic elements of the SSECM. Therefore, the bias‐ and temperature‐dependent effect of the access resistances needs to be considered in SSECM of GaN HEMTs before extracting the intrinsic elements.…”

Section: Introductionmentioning

confidence: 99%

A scalable and multibias parameter extraction method for a small‐signal GaN HEMT model

Yong-bo

Wang³

et al. 2018

Int J Numerical Modelling

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In this paper, a scalable and multibias parameter extraction method for gallium nitride high electron mobility transistor small‐signal model has been proposed. The main advantage of this method is that the temperature‐dependent access resistances and nonlinear thermal resistance have been taken into account, which makes the extracted access resistances and intrinsic elements more physical and reliable at different bias conditions for various device dimensions. The new modeling method has been validated by comparing the simulated small‐signal S‐parameters with the measured data over a wide range of frequency.

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“…GaN‐based high electron mobility transistors (HEMTs) are one of the most attractive solid device for high‐power and high‐frequency microwave devices . Accurate models can promote the efficiency of circuit design and is essential to circuit designer. With the increasing operation frequency of GaN HEMT, characterization of GaN HEMTs up to W‐band is highly attracted recently .…”

Section: Introductionmentioning

confidence: 99%

An accurate parasitic parameters extraction method based on FW‐EM for AlGaN/GaN HEMT up to 110 GHz

Jia

2017

Int J Numerical Modelling

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In this paper, an accurate parasitic parameters extraction method based on full wave electromagnetic for 0.1 μm GaN high electron mobility transistors (HEMTs) smallsignal equivalent circuit up to 110 GHz is presented. To describe the distribution effects of HEMTs electrodes at extremely high frequency, a 2-stage distributed transmission line equivalent circuit model is also presented. To minimize the distribution effects, a shorter gate-width device, called partial transistor model, is used to extract the second stage (N = 2) parasitic capacitance before extracting the first stage (N = 1) parameters. An AlGaN/GaN HEMT with gate length of 0.1 μm is used for validation, and the experimental results show that good agreement has been achieved between measured and simulated scattering (S) parameters up to 110 GHz. KEYWORDSAlGaN/GaN HEMTs, high frequency distribution effects, parasitic parameter model | INTRODUCTIONGaN-based high electron mobility transistors (HEMTs) are one of the most attractive solid device for high-power and high-frequency microwave devices. 1 Accurate models 2-4 can promote the efficiency of circuit design and is essential to circuit designer. With the increasing operation frequency of GaN HEMT, characterization of GaN HEMTs up to W-band is highly attracted recently. [5][6][7] At extremely high frequency, much more parasitic parameters for transistor need to be considered to account for high-frequency effects. However, the complicated parasitic parameters network will dramatically increase the difficulty of parameters extraction. Most of the papers have to use optimization method, which have challenges like multivalues problem, nonphysical results, and difficult to separate the parasitic capacitance and intrinsic capacitance. 8 It is need the guessed starting values of the parasitic parameters and a family of scaling devices be available for measurement to get the optimal values for device by Sergio. 9 Zlatica 10 used artificial neural networks for constructing a temperature-dependent model representing the small-signal scattering (S-) parameters of a GaN HEMT over a wide bias range and a board frequency range, while this method need tremendous measured data and high computer configuration. In Jarndal and Kompa, 11 a new parasitic elements extraction method based on cold pinch-off conditions was developed. This method uses only a cold-parameter measurement for accurate determination of the parasitic elements. The main advantage of this method is that it gives reliable values for the parasitic elements of the device without need for additional measurements or separate test pattern. But it needs hard task, when there are much more parasitic parameters up 110 GHz. Giovanni 12 used a new and simple T-network composed by lumped elements for representing the investigated GaN HEMT under a forward "cold" condition, which takes into account the capacitive effects of S11 and S22. All extrinsic parasitic elements are evaluated under "cold-FET" conditions without forward biasing the gate terminal. 13...

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Temperature-Dependent Access Resistances in Large-Signal Modeling of Millimeter-Wave AlGaN/GaN HEMTs

Cited by 37 publications

References 29 publications

High Frequency Noise Model of AlGaN/GaN HEMTs

High Frequency Noise Model of AlGaN/GaN HEMTs

A scalable and multibias parameter extraction method for a small‐signal GaN HEMT model

An accurate parasitic parameters extraction method based on FW‐EM for AlGaN/GaN HEMT up to 110 GHz

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