Temperature Dependent Analytical DC Model for Wide Bandgap MESFETs

Abstract

In this paper, an analytical model has been developed to predict DC characteristics of wide bandgap metal semiconductor field effect transistors (MESFETs). The model evaluates potential distribution inside the channel of the device by dividing the Schottky barrier depletion layer into four distinct regions and predicts I − V characteristics both at the room as well as at elevated temperatures. It also considers selfheating effects caused by the high-drain current and predicts negative output conductance, usually exhibited by wide bandgap MESFETs. The validity of the proposed technique is ensured by applying it on GaN and SiC MESFETs. It has been shown that the developed technique offers ∼ 50% and ∼ 37% improved accuracy in predicting the output characteristics of the device at T = 300 K and T = 500 K, respectively, relative to the best reported model. Thus, the proposed technique can be employed in the device modeling software involving high-power MESFETs.INDEX TERMS MESFETs, analytical model, I − V characteristics, self-heating effects.

Hybrid multimodule DC–DC converters accelerated by wide bandgap devices for electric vehicle systems

“…In this regard, a better temperature-dependent analytical model is presented by S. Rehman et al In this modeled data, improvement is made due to a comparative analysis of modeled and observed characteristics. To assess the Miller capacitance, the analytical expressions are developed for linear and saturation regions of operation 42 . An intelligent control method for DC fast charging stations is introduced in 43 , where a control strategy is presented to control the voltage fluctuations.…”

“…Here, this can be calculated:

Figure 7 Typical Lateral GaN FinFET Structures 80 .

Figure 8 A cross-sectional view of an operating MESFET 42 .

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“…It has been observed that devices fabricated using SiC and GaN have superior performance, both in DC and RF domains, compared to GaAs MESFETs. SiC MESFETs have excellent heat conduction in high-power applications and show maximum stability in performance 42 . By using work done by different researchers, it is shown that SiC MESFETs have great potential to be used in harsh environments.…”

Scaling Effect in Gate-Recessed AlGaN/GaN Fin-Nanochannel Array MOSHEMTs

“…Among them, AlGaN/GaN HEMTs have received widespread attention due to the high-density and high-mobility two-dimensional electron gas (2-DEG) induced in the polarized AlGaN/GaN heterojunction. Despite the successful demonstration of Schottky-structured metalsemiconductor HEMTs (MESHEMTs) [1], [2], [3], metaloxide-semiconductor HEMTs (MOSHEMTs) were reported to have improved high-power-handling capability, hightemperature operation, and high operation voltage [4], [5], [6]. Several insulators, such as Al2O3, ZnO, HfO2, and SiO2, were inserted between the GaN-based semiconductor and gate metal as a gate insulator in GaN-based MOSHEMTs [7], [8].…”