Temperature dependent c-axis hole mobilities in rubrene single crystals determined by time-of-flight

Pundsack, Tom J.; Haugen, Neale O.; Johnstone, Lucas R.; Frisbie, C. Daniel; Lidberg, Russell L.

doi:10.1063/1.4914975

Cited by 13 publications

(13 citation statements)

References 35 publications

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“…However, they also highlighted the ease of reproducibly using the TOF method compared to the SCLC in which contact preparation can easily damage the fragile crystals, leading to interfacial defects and traps hampering the measurement . Similar measurements performed along the c axis of rubrene single crystals highlighted a mobility around 0.2 cm 2 V −1 s −1 increasing as a power law from room temperature up to 0.7 cm 2 V −1 s −1 at 180 K . These results are in good agreement with those obtained by Batlogg et al via the admittance spectroscopy technique .…”

Section: Charge Transportsupporting

confidence: 85%

“…Strangely, electrical conductivity along z direction is observed for rubrene 3 . A not so low value of µ = 0.29 cm 2 V −1 s −1 along the c axis (corresponding to z direction, orthorhombic unit cell) has been recorded at room temperature . At first glance, it is surprising because transfer integrals along the c axis are negligible, but it could be explained considering crystal growth modes and the α factor.…”

Section: Charge Transportmentioning

confidence: 99%

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Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

et al. 2020

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The field of organic electronics has been prolific in the last couple of years, leading to the design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm2 V−1 s−1. However, it is also started to recently falter, as a result of doubtful mobility extractions and reduced industrial interest. This critical review addresses the community of chemists and materials scientists to share with it a critical analysis of the best performing molecular semiconductors and of the inherent charge transport physics that takes place in them. The goal is to inspire chemists and materials scientists and to give them hope that the field of molecular semiconductors for logic operations is not engaged into a dead end. To the contrary, it offers plenty of research opportunities in materials chemistry.

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Section: Charge Transportsupporting

confidence: 85%

Section: Charge Transportmentioning

confidence: 99%

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

et al. 2020

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“…ToF and SCLC measurements do access the bulk transport but in the low‐mobility c ‐axis of the crystals. [ 55,56 ] In this sense, the information on the intrinsic bulk mobility along the rubrene's b ‐axis provided by the photo‐Hall measurements is unique.…”

Section: Photo‐hall Effect Measurements In Rubrene Crystals Subjectedmentioning

confidence: 99%

The Photo‐Hall Effect in High‐Mobility Organic Semiconductors

Bruevich

Choi

Podzorov

2020

Adv Funct Materials

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High‐mobility crystalline organic semiconductors are important for applications in advanced organic electronics and photonics. Photogeneration and transport of mobile photocarriers in these materials, although very important, remain underexplored. The photo‐Hall effect can be used to address the fundamental charge transport properties of these functional molecular materials, without the need for fabricating complex transistor devices or chemical doping. Here, a photo‐Hall effect is demonstrated in organic semiconductors, using a benchmark molecular system rubrene as an experimental platform. It is shown that this technique can be used to directly measure the charge carrier mobility and photocarrier density, decouple the surface and bulk transport phenomena, and thus significantly deepen the understanding of the mechanism of photoconductivity in these high‐performance molecular materials.

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“…Based on the perturbation theory of the superexchange mechanism, the Dexter coupling reads: V Dex = 2 V CT 2 /Δ E CT , where Δ E CT is the energy difference between the triplet and intermediate charge transfer states which amounts to 2–3 eV based on the previous analysis . For the rubrene single crystal, the experimentally observed hole mobility along the b -axis is very high (∼20 cm 2 /(V s)), , while that along the c -axis is in the order of 0.2–0.7 cm 2 /(V s), , where the hole-transfer coupling along the c -axis is reported to be ∼2.7 meV . Thus, the Dexter coupling along the c -axis of rubrene is expected to be very small (in the order of 10 –3 meV) based on the superexchange mechanism.…”

mentioning

confidence: 99%

Long-Range Exciton Diffusion via Singlet Revival Mechanism

Tamura

Azumaya

Ishikita

2019

J. Phys. Chem. Lett.

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We clarify the mechanism that leads to extended exciton diffusion length in organic materials which exhibit a strong anisotropy of electronic coupling. We analyze the cooperative effects of singlet fission and triplet–triplet annihilation in the exciton diffusion by means of the dynamic Monte Carlo simulations. As a model system, we consider the rubrene crystal which exhibits a long-range exciton diffusion. The deexcitation of the singlet exciton is suppressed by singlet → triplet conversion via singlet fission. Even though the triplet exciton would hardly diffuse along the c-axis in the rubrene crystal (perpendicular to the high mobility plane) because of the small electronic coupling, the regeneration of the singlet exciton via triplet–triplet annihilation enables long-range exciton diffusion along the c-axis. This singlet revival mechanism can extend the overall lifetime and the diffusion length of the exciton, through back-and-forth transitions between an isotropically diffusing singlet exciton and a long-lived triplet exciton.

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Temperature dependent c-axis hole mobilities in rubrene single crystals determined by time-of-flight

Cited by 13 publications

References 35 publications

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

The Photo‐Hall Effect in High‐Mobility Organic Semiconductors

Long-Range Exciton Diffusion via Singlet Revival Mechanism

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