Temperature-dependent characteristics of 1.3 μm InAs/InGaAs/GaAs quantum dot ring lasers

Abstract

The temperature characteristics of ring lasers with a diameter of 480 μm of an original design with an active region based on 10 layers of InAs/InGaAs/GaAs quantum dots are studied. The lasers demonstrated a low threshold current density (200 A/cm2 at 20oC), the characteristic temperature of the threshold current in the range of 20-100oC was 68 K, the maximum lasing temperature was as high as 130oC. These values are only slightly inferior to the parameters of the edge-emitting lasers fabricated from the same epitaxial wafer. Keywords: semiconductor ring lasers, InAs/GaAs quantum dots, optical waveguide, temperature characteristics.