Temperature-Dependent Concentration Quenching of Fluorescence by Cross Relaxation of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="normal">Nd</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:mrow></mml:math>in La<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">F</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mm

Asawa, C. K.; Robinson, M.

doi:10.1103/physrev.141.251

Cited by 57 publications

(8 citation statements)

References 20 publications

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“…A corresponding minimum in the relationship between carrier lifetime and temperature has been found to occur at approximately the same temperature. 12 Following the procedure proposed by Rose 11 and further discussed by Bube, 13 ing to minima on Fig. 2 are on Fig.…”

Section: Analysis Of Resultsmentioning

confidence: 99%

Defect Energy-Level Structure of PbI2Single Crystals

Dugan

Henisch

1968

Phys. Rev.

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The photoluminescence spectrum of gel-grown Pbl 2 single crystals reveals features at 2.41, 2.31, 2.16, 2.13, 2.10, 1.99, 1.97, 1.94, and 1.85 eV, and the photoconductive response spectrum at 3.06, 2.41, 2.16, and 1.99 eV. An analysis of temperature quenching of the photocurrent indicates sensitizing centers located M).46 eV above the top of the valence band. A defect energy-level structure for Pbl 2 has been proposed on the basis of this information. The results also suggest the existence of ^0.03-eV optical phonons, associated with the 2.16-and 1.99-eV emission peaks.

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Section: Analysis Of Resultsmentioning

confidence: 99%

Defect Energy-Level Structure of PbI2Single Crystals

Dugan

Henisch

1968

Phys. Rev.

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“…The thermal evolution of is similar to the one observed in Nd 3ϩ -doped LaF 3 bulk samples, which has been explained as due to the difference between the combined probabilities of the radiative transition from the ground and excited components of the excited state 4 F 3/2 and to the cross-relaxation transition probability between energy levels of Nd 3ϩ ions. 13,14 The higher values obtained in the homoepitaxial sample could be due to small differences in the Nd 3ϩ content of the samples. 14 No significant difference is detected in the lifetime of center 1 and center 2 in the LaF 3 /CaF 2 (110) layer at any temperature.…”

Section: Decay Time Measurementsmentioning

confidence: 93%

Hetero- and homoepitaxial Nd3+-doped LaF3 thin films grown by molecular beam epitaxy: A spectroscopic study

Lahoz

Daran

Zhang

et al. 1999

Journal of Applied Physics

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Hetero- and homoepitaxial Nd3+-doped LaF3 thin films have been grown by molecular beam epitaxy. Two different orientations of CaF2 substrates, (111) and (110), have been used for the heteroepitaxial structures. High-resolution emission and excitation spectra as well as the decay time of the emission have been measured. The spectroscopic measurements demonstrate that one Nd3+ site is present in the LaF3 layers grown on CaF2(111) substrates but two slightly different Nd3+ centers are resolved in the films on CaF2(110) substrates. One Nd3+ site has been found in the homoepitaxial sample. Slight differences are observed between the centers found in the LaF3 layers and the one observed in the Nd3+-doped LaF3 bulk crystal. For the homoepitaxial layer, the linewidths are similar to those of the bulk crystals, whereas for the heteroepitaxial layers, a broadening is observed.

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“…4 Relative populations in the B 2~ state are shown in Fig. 12 Other CN emission due to transitions such as D 2II~ X 2~ and D 2II---'-A 2II might be expected in this wavelength region. Vibrational distributions under the blue flame condition are quite similar for BrCN and CH2Cb flames.…”

Section: Generalitiesmentioning

confidence: 93%

Mechanisms of Populating Electronically Excited CN in Active Nitrogen Flames

Iwai

Savadatti

Broida

1967

The Journal of Chemical Physics

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C1\ red (A 211~X 2~) and violet (B 2~~X 2~) bands radiated from active nitrogen flames with halogenated hydrocarbons and with cyanogen derivatives have been studied at pressures from 0.013 to 100 torr. Intensity measurements have shown that there are three distinct vibrational population distributions PI, P 2 , and P a in the A 2II state and corresponding distributions PI', P 2', and Ps' in the B 2~ state of CN. At very low pressures, PI distributions are characteristic of cyanogen derivative flames and P 2 distributions are characteristic of halogenated hydrocarbon flames. Pa distributions are most easily observed at pressures above 1 torr and with trace amounts of fuels containing carbon. Three distinct mechanisms responsible for producing these three types of distributions are proposed; two mechanisms involve the transfer of energy derived from the recombination of atomic nitrogen and the third is a chemical reaction using atomic nitrogen. Vibrational relaxation is observed for the P2 and P/ distributions. Small amounts of oxygen are found to increase greatly the CN emission at low pressures. Intensity measurements of rotationallines in the red bands and in the violet 0, 0 band have been made as a function of pressure in CH2Cl, flames. In the A 2II state at pressures above 4 torr, a rotational temperature of 340 0 K can be defined, but below 4 torr the rotational distribution is best represented by a sum of two Boltzmann distributions. The effect of pressure on the amount of CN in the two distributions leads to a measured cross section of 15 12 for the effective collisional relaxation of rotation. From a study of the violet 0, 0 band, several new pairs of rotationally perturbed lines are found at low pressures. The formation rate of the A 'II state relative to the B 2~ state and to the X 2~ state is obtained from the intensity ratio of main lines relative to extra lines in rotational perturbed pairs. CN is found to be formed in the A 2II state at least 30 times more readily than in the B 2~ state and about four times faster than in the X 2~ state.

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Temperature-Dependent Concentration Quenching of Fluorescence by Cross Relaxation ofNd3+in LaF3

Cited by 57 publications

References 20 publications

Defect Energy-Level Structure of PbI2Single Crystals

Defect Energy-Level Structure of PbI2Single Crystals

Hetero- and homoepitaxial Nd3+-doped LaF3 thin films grown by molecular beam epitaxy: A spectroscopic study

Mechanisms of Populating Electronically Excited CN in Active Nitrogen Flames

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