Temperature dependent current–voltage and admittance spectroscopy on heat-light soaking effects of Cu(In,Ga)Se2 solar cells with ALD-Zn(O,S) and CBD-ZnS(O,OH) buffer layers

Kobayashi, Taizo; Jehl, Zacharie; Nakada, Tokio

doi:10.1016/j.solmat.2015.06.044

Cited by 48 publications

(17 citation statements)

References 40 publications

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“…The deviation in cell efficiency of our in-house and NREL measurements was around 1% [22-Supplementary, Table 1]. The J-V measurement system and conditions, used in this experiment, were the same as those presented in our previous publication [22]. C-V profiles were recorded using a 4200-SCS parameter analyzer (Keithley Instruments, Cleveland, OH, USA) at 100 kHz in the dark at room temperature.…”

Section: Methodsmentioning

confidence: 99%

Effect of potassium fluoride post-deposition treatment on Cu(In,Ga)Se2 thin films and solar cells fabricated onto sodalime glass substrates

Khatri

Fukai

Yamaguchi

et al. 2016

Solar Energy Materials and Solar Cells

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Section: Methodsmentioning

confidence: 99%

Effect of potassium fluoride post-deposition treatment on Cu(In,Ga)Se2 thin films and solar cells fabricated onto sodalime glass substrates

Khatri

Fukai

Yamaguchi

et al. 2016

Solar Energy Materials and Solar Cells

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“…Light soaking (LS) process has been reported as a method to enhance the hole concentrations of the CIGS layer after keeping the solar cell in the dark, thus recovering the η . Kobayashi et al reported that heat‐light soaking (HLS) process on the ZnS (O,OH)/CIGSe solar cells at 130°C under an air mass (AM) 1.5G spectrum for 80 minutes gives rise to the enhancement of the η because the atomic ratio of S to group VI elements in the ZnS (O,OH) buffer layer is optimized . The reduction of the carrier recombination in the device could account for this increase in the η through the HLS process.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of photovoltaic performances of Cu (In,Ga)(S,Se)₂ solar cell through combination of heat‐light soaking and light soaking processes

Chantana

Kato

Sugimoto

et al. 2018

Progress in Photovoltaics

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Potassium-treated Cu (In,Ga)(S,Se) 2 (CIGSSe)-based solar cell with power conversion efficiency (η) of 19.4% is obtained using high transparent Cd 0.75 Zn 0.25 S/ Zn 0.79 Mg 0.21 O/Zn 0.88 Mg 0.12 O:Al layers to minimize optical loss at short wavelength (~520 nm) and to control total conduction band minimum alignment. To further enhance η, the post treatment named HLS + LS process, including heat-light soaking (HLS) at 110°C under AM 1.5G illumination followed by light soaking (LS) under AM 1.5G illumination, is conducted successively on the as-fabricated solar cell. It is revealed that HLS in the HLS + LS process mainly yields the increase in open-circuit voltage. On the other hand, LS in the HLS + LS process primarily leads to the increase in fill factor, attributable to the decrease in sheet resistance of Zn 0.88 Mg 0.12 O:Al. The HLS + LS process consequently gives rise to not only the enhancement of carrier concentration but also the decrease in the recombination rate at the buffer/absorber interface through passivating the recombination centers. As a result, 21.2%-efficient CIGSSe solar cell with the Cd 0.75 Zn 0.25 S/Zn 0.79 Mg 0.21 O/Zn 0.88 Mg 0.12 O:Al layers is attained after the HLS + LS process, which is an effective process to enhance photovoltaic performances.

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“…In contacts on Mo layers were finally prepared by soldering method in Figure . The completed CIGSSe solar cells with the buffer layers consisting of ZnS(O,OH), namely, structures (3), (4), and (5) in Figure , were treated with heat light soaking (HLS), a combination of 1‐sun LS (Air Mass 1.5G illumination, 100 mW/cm 2 ) and heating at 130°C for 80 minutes, to improve cell performances . It is noted that the photovoltaic parameters of the completed CIGSSe solar cells with structures (3), (4), and (5) before HLS are demonstrated in Table .…”

Section: Methodsmentioning

confidence: 99%

“…The solution for CdS growth was composed of CdSO 4 (1.13 mmol/L), ammonia (2.37 mol/L), and thiourea (56.3 mmol/L), while that for (Cd,Zn)S growth consisted of CdSO 4 (1.5 mmol/L), ZnSO 4 (7 mmol/L), ammonia at 130°C for 80 minutes, to improve cell performances. [24][25][26] It is noted that the photovoltaic parameters of the completed CIGSSe solar cells with structures (3), (4), and (5) before HLS are demonstrated in Table 1.…”

Section: Introductionmentioning

confidence: 99%

Heterointerface recombination of Cu(In,Ga)(S,Se)₂‐based solar cells with different buffer layers

Chantana

Kato

Sugimoto

et al. 2017

Progress in Photovoltaics

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Cu(In,Ga)(S,Se)2 solar cell is high conversion efficiency (η) thin‐film solar cell. One of the methods to further increase the η is to replace traditional CdS/ZnO buffer layers by more transparent materials to enhance carrier generation in spectral region from 330 to 550 nm. Cd0.75Zn0.25S/ZnO, thin CdS/ZnS(O,OH)/ZnO, and thin CdS/ZnS(O,OH)/Zn0.79Mg0.21O buffer layers are therefore developed to replace the traditional CdS/ZnO buffer layers in Cu(In,Ga)(S,Se)2‐based solar cells. ZnO, Zn0.79Mg0.21O, and ZnO:Al are prepared by sputtering method. Low‐surface carrier recombination, caused by low sputtering damage, is observed in the solar cells with CdS/ZnO or Cd0.75Zn0.25S/ZnO buffer layers, while the highest surface carrier recombination is presented in the solar cell with ZnS(O,OH)/ZnO buffer layer. Therefore, thin CdS/ZnS(O,OH)/ZnO or Zn0.79Mg0.21O buffer layers are applied in the solar cells to decrease surface recombination (reduced sputtering damage). Ultimately, conversion efficiencies of the solar cells with Cd0.75Zn0.25S/ZnO, thin CdS/ZnS(O,OH)/ZnO, and thin CdS/ZnS(O,OH)/Zn0.79Mg0.21O buffer layers are enhanced to 19.61, 18.60, and 18.81%, respectively, which are higher than that of 18.32% for the solar cell with the traditional CdS/ZnO buffer layers.

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Temperature dependent current–voltage and admittance spectroscopy on heat-light soaking effects of Cu(In,Ga)Se2 solar cells with ALD-Zn(O,S) and CBD-ZnS(O,OH) buffer layers

Cited by 48 publications

References 40 publications

Effect of potassium fluoride post-deposition treatment on Cu(In,Ga)Se2 thin films and solar cells fabricated onto sodalime glass substrates

Effect of potassium fluoride post-deposition treatment on Cu(In,Ga)Se2 thin films and solar cells fabricated onto sodalime glass substrates

Enhancement of photovoltaic performances of Cu (In,Ga)(S,Se)₂ solar cell through combination of heat‐light soaking and light soaking processes

Heterointerface recombination of Cu(In,Ga)(S,Se)₂‐based solar cells with different buffer layers

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Temperature dependent current–voltage and admittance spectroscopy on heat-light soaking effects of Cu(In,Ga)Se2 solar cells with ALD-Zn(O,S) and CBD-ZnS(O,OH) buffer layers

Cited by 48 publications

References 40 publications

Effect of potassium fluoride post-deposition treatment on Cu(In,Ga)Se2 thin films and solar cells fabricated onto sodalime glass substrates

Effect of potassium fluoride post-deposition treatment on Cu(In,Ga)Se2 thin films and solar cells fabricated onto sodalime glass substrates

Enhancement of photovoltaic performances of Cu (In,Ga)(S,Se)2 solar cell through combination of heat‐light soaking and light soaking processes

Heterointerface recombination of Cu(In,Ga)(S,Se)2‐based solar cells with different buffer layers

Contact Info

Product

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Enhancement of photovoltaic performances of Cu (In,Ga)(S,Se)₂ solar cell through combination of heat‐light soaking and light soaking processes

Heterointerface recombination of Cu(In,Ga)(S,Se)₂‐based solar cells with different buffer layers