Temperature dependent dynamic ESD processes in alkali halides

Kołodziej, Jacek; Czuba, P.; Piątkowski, P.; Poradzisz, A.; Postawa, Zbigniew; Szymoński, Marek; Fine, Joseph

doi:10.1016/0168-583x(92)95095-9

Cited by 16 publications

(3 citation statements)

References 25 publications

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“…When the H-center reaches the surface a halogen adatom is produced. Since the binding energy of such adatoms is relatively low À 0.19 eV -in case of a KBr crystal [60] -it is easily desorbed. The interaction of the H-center with the surface does not lead to surface erosion [61].…”

Section: Electronsmentioning

confidence: 99%

Highly charged ion induced nanostructures at surfaces by strong electronic excitations

Wilhelm¹,

El-Said²,

Heller³

et al. 2015

Progress in Surface Science

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a b s t r a c tNanostructure formation by single slow highly charged ion impacts can be associated with high density of electronic excitations at the impact points of the ions. Experimental results show that depending on the target material these electronic excitations may lead to very large desorption yields in the order of a few 1000 atoms per ion or the formation of nanohillocks at the impact site. Even in ultra-thin insulating membranes the formation of nanometer sized pores is observed after ion impact. In this paper, we show recent results on nanostructure formation by highly charged ions and compare them to structures and defects observed after intense electron and light ion irradiation of ionic crystals and graphene. Additional data on energy loss, charge exchange and secondary electron emission of highly charged ions clearly show that the ion charge dominates the defect formation at the surface.

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Section: Electronsmentioning

confidence: 99%

Highly charged ion induced nanostructures at surfaces by strong electronic excitations

Wilhelm¹,

El-Said²,

Heller³

et al. 2015

Progress in Surface Science

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“…Previously, the present authors proposed that this behavior was due to a steady state concentration of defects created in the crystal by the electron beam. 20 However, further experiments have shown that the nonthermal component is not significantly dependent on the current density, 22 and on the concentration of impurities in the lattice. 32 In this section we demonstrate that this weak temperature dependence can be satisfactorily explained by the interaction of hot excitation carriers ͑excitons͒ with the polar lattice and that invoking of other concepts is not required.…”

Section: Dependence Of Nonthermal Desorption On Temperaturementioning

confidence: 99%

Hot-carrier transport processes in stimulated desorption of alkali halides

Kołodziej

Szymoński

1998

Phys. Rev. B

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Electron-and photon-stimulated desorption of epitaxial thin films and bulk single crystals of alkali halides has been investigated. It has been found that the widely accepted model based on self-trapped exiton decay and thermally activated defect diffusion cannot account for a number of experimental observations. In particular, it cannot explain the stability of the very thin alkali-halide films against the electron beam, and it fails to interpret correctly the yield dependence of the halogen atoms emitted with nonthermal energies on the film thickness and sample temperature. It is shown that for satisfactory interpretation of those data one has to take into account early stages of crystal excitation, i.e., hot carrier formation and transport processes occurring prior to self-trapped exciton phase. Consequently, a comprehensive description of the observed desorption features is presented.

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“…We consider the desorption of CrO 2 F 2 and CrOF 2 as a more important step to control the etch rate of Cr. Research on electron beam induced chemistry [18][19][20] has revealed that a volatile product is necessary to carry out the removal of ions from the solid surface, because the electron beam itself cannot sputter away mass as in a FIB. If the product cannot be removed as fast, the accumulation will stop the process.…”

Section: Discussion Of Electron Beam Chemistrymentioning

confidence: 99%

Etching characteristics of chromium thin films by an electron beam induced surface reaction

Wang

Griffis

Garcia

et al. 2003

Semicond. Sci. Technol.

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In this paper, we demonstrate the etching of chromium (Cr) film on quartz through a surface reaction induced by an electron beam and enhanced with XeF 2 gas. We have studied the influences of the electron beam energy, the gas flow rate and the specimen composition on the etch rate. The electron beam energy has significant influence on the etch rate. The etch rate made by an electron beam of 20 keV is five times higher compared to that made by a beam of 10 keV. The XeF 2 gas flow rate shows little effect on the etch rate when the gas pressure is higher than 2 × 10 −6 Torr. The structure and grain size of the Cr film did not show any apparent change under exposure to XeF 2 or when irradiated by an electron beam, while the composition of Cr has a significant effect on the etch process. The material removal of Cr induced by an electron beam means that it can be applied to the direct fabrication of microstructures on Cr films and that it solves the contamination problem in Cr mask repair.

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Temperature dependent dynamic ESD processes in alkali halides

Cited by 16 publications

References 25 publications

Highly charged ion induced nanostructures at surfaces by strong electronic excitations

Highly charged ion induced nanostructures at surfaces by strong electronic excitations

Hot-carrier transport processes in stimulated desorption of alkali halides

Etching characteristics of chromium thin films by an electron beam induced surface reaction

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