Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni,Zn-doped)/n-Si Schottky diodes

Dökme, İlbilge; Altındal, Ş.; Tunç, Tuncay; Uslu, İbrahım

doi:10.1016/j.microrel.2009.09.005

Cited by 127 publications

(41 citation statements)

References 42 publications

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“…Such behavior of C shows that there are various kinds of interface states with different life times and they can follow ac signal especially at low and intermediate frequencies but cannot follow at high frequencies especially in the depletion region of structure. The capacitance of such an inhomogeneous layer at the semiconductor/insulator interface acts in a series with the insulator capacitance causing frequency dispersion [9,20,21,23]. Because at lower frequencies, the interface states can easily follow an ac signal and yield an excess capacitance (C ss ) and conductance (G ss ).…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, GaN and some other compounds have been studied extensively for their applications in short wavelength optical and high-power/temperature devices, such as light emitting diodes (LEDs), laser diodes (LDs), metal-semiconductor (MS) Schottky barrier diodes (SBDs), metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs). GaN high-electron-mobility transistors (HEMTs) with Schottky/rectifier metal contact have demonstrated excellent highfrequency, high-power, high temperature and recently good microwave-noise characteristics [1][2][3][4][5][6][7][8][9][10]. The performance level of GaN/ AlGaN HEMT devices has increased rapidly over the last few years.…”

Section: Introductionmentioning

confidence: 99%

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On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures

Tekeli

Gökçen

Altındal

et al. 2011

Microelectronics Reliability

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a b s t r a c tThe voltage (V) and frequency (f) dependence of dielectric characteristics such as dielectric constant (e 0 ), dielectric loss (e 00 ), dielectric loss tangent (tan d) and real and imaginary part of electrical modulus (V 0 and M 00 ) of the (Ni/Au)/GaN/Al 0.3 Ga 0.7 N heterostructures have been investigated by using experimental admittance spectroscopy (capacitance-voltage (C-V) and conductance-voltage (G/w-V)) measurements at room temperature. Experimental results show that the values of the e 0 , e 00 , tan d and the real and imaginary parts of the electric modulus (V 0 and M 00 ) obtained from the C and G/w measurements were found to be strong function of frequency and applied bias voltage especially in depletion region at low frequencies. These changes in dielectric parameters can be attributed to the interfacial GaN cap layer, interface polarization and a continuous density distribution of interface states and their relaxation time at metal/semiconductor interface. While the values of the e 0 decrease with increasing frequencies, tan d, V 0 and M 00 increase with the increasing frequency. Also, the dielectric loss (e 00 ) have a local maximum at about frequency of 100 kHz. It can be concluded that the interface polarization can occur more easily at low frequencies with the number of interface states located at the metal/semiconductor interface.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures

Tekeli

Gökçen

Altındal

et al. 2011

Microelectronics Reliability

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“…To correct for the effect of series resistance on the capacitance and conductance, the following equations can be used [19][20][21][22]:…”

Section: Resultsmentioning

confidence: 99%

“…These values were calculated from measured capacitance and conductance values of at the accumulation region [21][22][23][24]. The plot shows a peak, wherein the peak position changes with increased frequency.…”

Section: Resultsmentioning

confidence: 99%

Electrical and Photoconductivity Properties of Al/CdFe₂O₄/p-Si/Al Photodiode

Çavaş

Yakuphanoğlu

Kaya

2016

Journal of Photonics

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In the present study, we have investigated the effects of illumination intensity on the optical and electrical characteristics of the Al/CdFe 2 O 4 /p-Si/Al photodiode. A thin film of CdFe 2 O 4 was fabricated using the sol-gel spin coating method that allows good thickness control and low-cost manufacturing as compared to alternative techniques. The current-voltage (I-V) of the Al/CdFe 2 O 4 /p-Si/Al photodiode was measured in the dark and under different illumination intensities. The photocurrent increased with higher luminous intensity and its sensitivity has a strong dependence on the reverse bias rising from 1.08 * 10 −7 A under dark conditions to 6.11 * 10 −4 A at 100 mW/cm 2 of illumination. The parameters of the photodiode such as ideality factor and barrier height were calculated using the thermionic emission model. The ideality factor of the Al/CdFe 2 O 4 /p-Si/Al photodiode was found to be 4.4. The barrier height was found to be 0.88 eV. The capacitance-voltage (C-V) characteristics measured at different frequencies have strongly varied with frequency, decreasing with frequency. Consequently, the resulting interface density ( it ) value of the Al/CdFe 2 O 4 /p-Si/Al photodiode also decreased with higher frequency. Similarly, the fitted series resistance of the Al/CdFe 2 O 4 /pSi/Al photodiode has declined with higher frequency.

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“…It is evaluated that the peak is distributed with series resistance. Thus, we have corrected the capacitance and conductance plots of the diodes by the following relations [35,36]:…”

Section: Introductionmentioning

confidence: 99%

A DNA Biosensor Based Interface States of a Metal-Insulator-Semiconductor Diode for Biotechnology Applications

et al. 2012

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We studied how a DNA sensor based on the interface states of a conventional metalinsulatorsemiconductor diode can be prepared for biotechnology applications. For this purpose, the p-type silicon/metal diodes were prepared using SiO2 and DNA layers. The obtained results were analyzed and compared with interfaces of DNA and SiO2. It is seen that the ideality factor (1.82) of the Al/p-Si/SiO2/DNA/Ag diode is lower than that (3.31) of the Al/p-Si/SiO2/Ag diode. This indicates that the electronic performance of DNA/Si junction was better than that of SiO2/Si junction. The interface states of the Al/p-Si/SiO2/DNA/Ag and Al/p-Si/SiO2/Ag junctions were analyzed by conductance technique. The obtained Dit values indicate that the DNA layer is an eective parameter to control the interface states of the conventional Si based on metal/semiconductor contacts. Results exhibited that DNA based metalinsulatorsemiconductor diode could be used as DNA sensor for biotechnology applications.

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Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni,Zn-doped)/n-Si Schottky diodes

Cited by 127 publications

References 42 publications

On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures

On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures

Electrical and Photoconductivity Properties of Al/CdFe₂O₄/p-Si/Al Photodiode

A DNA Biosensor Based Interface States of a Metal-Insulator-Semiconductor Diode for Biotechnology Applications

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Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni,Zn-doped)/n-Si Schottky diodes

Cited by 127 publications

References 42 publications

On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures

On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures

Electrical and Photoconductivity Properties of Al/CdFe2O4/p-Si/Al Photodiode

A DNA Biosensor Based Interface States of a Metal-Insulator-Semiconductor Diode for Biotechnology Applications

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Electrical and Photoconductivity Properties of Al/CdFe₂O₄/p-Si/Al Photodiode