Temperature-Dependent Electrical Characteristics of p-Channel Mode Feedback Field-Effect Transistors

Abstract

In this study, the temperature-dependent electrical characteristics of p-channel mode feedback field-effect transistors (FBFETs) were examined at temperatures ranging from 250 to 425 K. Their steep subthreshold swings of less than 1 mV/dec were maintained even at temperatures up to 400 K. As the temperature increased to 400 K, the latch-up voltage shifted from −0.951 to −0.613 V, which was caused by a reduction in the potential barriers in the channels of the FBFETs. High Ion/Ioff ratios above 108 were maintained in the temperature range of 250 to 400 K. However, at temperatures over 400 K, the FBFETs were turned on regardless of the gate voltages owing to the generation of a thermally induced positive feedback loop.INDEX TERMS Field-effect transistor, positive feedback loop, temperature-dependent, simulation.

Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors

“…By contrast, the latch-up voltage in the p-channel mode shifts from 1.34 V to 10.45 V as the temperature increases from 25 °C to 280 °C. Despite the high potential barrier formed by the |VCG| of 15 V, thermally stimulated charge carriers are injected in the drain region for the n-channel mode and in the source region for the p-channel mode, and then, accumulate in the potential well for holes (electrons), resulting in a reduction in the potential barrier for According to a previous study [24], charge carriers with high kinetic energies can surpass the potential barriers formed in the channel region at high temperatures. This leads to the injection of charge carriers from the source or drain regions into the channel region, thereby activating a thermally induced PF loop.…”

“…By contrast, the SS values are maintained in a range of 1.4~3.3 mV/dec even at high temperatures. According to a previous study [ 24 ], charge carriers with high kinetic energies can surpass the potential barriers formed in the channel region at high temperatures. This leads to the injection of charge carriers from the source or drain regions into the channel region, thereby activating a thermally induced PF loop.…”