Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes

Zhu, Min; Ren, Yuan; Zhou, Leidang; Chen, Jiaxiang; Guo, Haowen; Zhu, Liqi; Chen, Baile; Chen, Liang; Lü, Xing; Zou, Xinbo

doi:10.1016/j.microrel.2021.114345

Cited by 12 publications

(1 citation statement)

References 41 publications

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“…DLTS has been performed on a variety of GaN-based devices such as Schottky barrier diodes (SBDs) [11] , p−n and p−i−n junctions [12] . These studies have revealed various traps in GaN films, which are grown by various methodologies involving metal-organic chemical vapor deposition (MOCVD) [13,14] , hydride vapor phase epitaxy (HVPE) [15] , and molecular beam epitaxy (MBE) [16] . Our previous work has demonstrated several majority carrier (electron) traps in n-GaN SBDs by DLTS technique using electrical pulses [17] .…”

Section: Introductionmentioning

confidence: 99%

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Sui,

Chen,

et al. 2024

J. Semicond.

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Emission and capture characteristics of a deep hole trap (H1) in n-GaN Schottky barrier diodes (SBDs) have been investigated by optical deep level transient spectroscopy (ODLTS). Activation energy (E emi) and capture cross-section (σ p) of H1 are determined to be 0.75 eV and 4.67 × 10−15 cm2, respectively. Distribution of apparent trap concentration in space charge region is demonstrated. Temperature-enhanced emission process is revealed by decrease of emission time constant. Electric-field-boosted trap emission kinetics are analyzed by the Poole−Frenkel emission (PFE) model. In addition, H1 shows point defect capture properties and temperature-enhanced capture kinetics. Taking both hole capture and emission processes into account during laser beam incidence, H1 features a trap concentration of 2.67 × 1015 cm−3. The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment.

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