Temperature dependent electrical characterization of RF sputtered MoS2/n-Si heterojunction

Ocak, Yusuf Selim; Bozkaplan, Cihat; Ahmed, H.; Tombak, Ahmet; Genişel, Mustafa Fatih; Asubay, Sezai

doi:10.1016/j.ijleo.2017.06.037

Cited by 17 publications

(2 citation statements)

References 22 publications

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“…The films are annealed or combined with other materials, such as silicon carbide crystals, thereby effectively improving their electrical properties [12][13][14][15]. The films have a direct band gap of 1.93 eV and an indirect band gap of 1.2 eV [16,17], and they are a promising photocatalyst [18]. Therefore, studying the structure and performance of MoS 2 films is or great practical significance.…”

Section: Introductionmentioning

confidence: 99%

Effects of Deposition and Annealing Temperature on the Structure and Optical Band Gap of MoS2 Films

Chen

Cui

et al. 2020

Materials

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In this study, molybdenum disulfide (MoS2) film samples were prepared at different temperatures and annealed through magnetron sputtering technology. The surface morphology, crystal structure, bonding structure, and optical properties of the samples were characterized and analyzed. The surface of the MoS2 films prepared by radio frequency magnetron sputtering is tightly coupled and well crystallized, the density of the films decreases, and their voids and grain size increase with the increase in deposition temperature. The higher the deposition temperature is, the more stable the MoS2 films deposited will be, and the 200 °C deposition temperature is an inflection point of the film stability. Annealing temperature affects the structure of the films, which is mainly related to sulfur and the growth mechanism of the films. Further research shows that the optical band gaps of the films deposited at different temperatures range from 0.92 eV to 1.15 eV, showing semiconductor bandgap characteristics. The optical band gap of the films deposited at 200 °C is slightly reduced after annealing in the range of 0.71–0.91 eV. After annealing, the optical band gap of the films decreases because of the two exciton peaks generated by the K point in the Brillouin zone of MoS2. The blue shift of the K point in the Brillouin zone causes a certain change in the optical band gap of the films.

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Section: Introductionmentioning

confidence: 99%

Effects of Deposition and Annealing Temperature on the Structure and Optical Band Gap of MoS2 Films

Chen

Cui

et al. 2020

Materials

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“…The results are generally in agreement with those obtained in previous The main reason for the difference in the calculated values is that the Norde functions are applied to the entire forwardvoltage region. It may also be due to the free carrier concentration caused by carriers at the interface between Pt/TiO2 nanotubes [37]- [39]. and Φb values at 100 mW/cm 2 illumination were calculated as 2.04 and 0.89 eV by using the I-V characteristic with TE method.…”

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confidence: 99%

Synthesis of TiO2 Nanotubes and Photodiode Performance

TAŞYÜREK

2023

Türk Doğa Ve Fen Dergisi

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In this study, titanium dioxide (TiO2) nanotubes were produced by anodization method using glycerol-based electrolyte. Structural characterization was investigated with SEM images and XRD pattern. The rectifying properties of n-type semiconductor TiO2 nanotubes were investigated. Current-voltage (I-V) measurements of the Pt/TiO2 nanotubes/Ti device were made at room temperature, in the dark and under different illumination conditions. The basic diode parameters were calculated by using thermionic emission (TE), Cheung and Norde functions from the I-V measurements of the devices in dark conditions. The ideality factors and barrier height of the Pt/TiO2 nanotubes/Ti device were calculated 1.25 and 0.91 eV, respectively by the TE method. According to the results obtained, the Pt/TiO2 nanotubes contact has a rectifying feature. In addition, the photovoltaic properties of the devices were examined by making I-V measurements at illumination intensities between 30 and 100 mW/cm2. As a result, it has been evaluated that the device can also be used as a photodiode.

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Enhancement in the Microelectronic Properties of a PFB–CdSe Quantum Dots Nanocomposite Based Schottky Barrier Diode

Muhammad

Tahir

Zeb

et al. 2019

Journal of Elec Materi

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Temperature dependent electrical characterization of RF sputtered MoS2/n-Si heterojunction

Cited by 17 publications

References 22 publications

Effects of Deposition and Annealing Temperature on the Structure and Optical Band Gap of MoS2 Films

Effects of Deposition and Annealing Temperature on the Structure and Optical Band Gap of MoS2 Films

Synthesis of TiO2 Nanotubes and Photodiode Performance

Enhancement in the Microelectronic Properties of a PFB–CdSe Quantum Dots Nanocomposite Based Schottky Barrier Diode

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