Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts

Taube, Andrzej; Kaczmarski, Jakub; Kruszka, R.; Grochowski, Jakub; Kosiel, Kamil; Gołaszewska-Malec, Krystyna; Sochacki, Mariusz; Jung, W.; Kamińska, E.; Piotrowska, Anna

doi:10.1016/j.sse.2015.04.001

Cited by 19 publications

(10 citation statements)

References 31 publications

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“…In the few studies on RB-HEMTs [1], [4]- [7], the reverse blocking was typically achieved by integrating a Schottky barrier diode (SBD) into the drain electrode [8]- [11], yet these devices presented small % B R and large IR, mainly limited by the generally poor reverse-blocking property of GaN SBDs. T. Morita et al reported bi-directional GaN switches with RB capabilities using two monolithic normally-off gate injection transistors [12], which despite the highly integrated architecture for bidirectional switching, presented a limited % B R voltage and a relatively large VON.…”

Section: Introductionmentioning

confidence: 99%

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Zhu

Matioli

2017

IEEE Electron Device Lett.

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Section: Introductionmentioning

confidence: 99%

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Zhu

Matioli

2017

IEEE Electron Device Lett.

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“…Có nhiều nhóm nghiên cứu đã báo cáo về tiếp giáp Ohmic của AlGaN/GaN HEMTs được chế tạo bằng cách ủ các lớp kim loại lắng đọng trên bề mặt của n-AlGaN [1, [6][7][8][9][10][11]. Sự hình thành tiếp giáp Ohmic có điện trở thấp trong một cấu trúc với lớp bề mặt có chiều cao rào thế Schottky lớn như n-GaN (hay AlGaN) yêu cầu một lớp bán dẫn pha tạp mạnh gần với tiếp xúc kim loại nhằm tạo điều kiện thuận lợi cho hiệu ứng xuyên hầm.…”

Section: 16unclassified

Studing the Effect of Etching Process on the Ohmic Specific Contact Resistance of AlGaN/GaN HEMT

2021

JST: ETSD

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In electronic devices, ranging from integrated circuits to solar cells, the Ohmic specific contact resistance between metal and semiconductor is a measure of device performance. In this paper, the effect of Induction Coupled Plasma etching (ICP) on creating specific contact resistance between metals and semiconductors was investigated by linear transmission method (LTLM). The obtained results show that selecting etching depth and etch process conditions by ICP method before metal coating is a decisive step in the manufacture of low resistance Ohmic contact. The value of formed Ohmic specific contact resistance is the lowest when the etching depth ensures the metal layers to cover the doped AlGaN region at a distance of about 8nm above the AlGaN/GaN interface. With an ion power source (RIE) of 30W and a plasma power source (ICP) of 250W, the etching rate of AlGaN material is approximately 27.21 nm / minute. The Ohmic specific contact resistance of metal layers Ti (20nm) / Al (200nm) / Pd (60nm) / Au (100nm) with AlGaN semiconductor has an optimal value of ρc = 1.08 x 10-7 cm2, despite the sample was annealing at a relatively low temperature of 650oC, in a nitrogen atmosphere at 650oC.

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“…Typically (see for instance [4][5][6]), the devices are tested in particular laboratory conditions in order to study R DSON variation. This approach (based on conventional double-pulse measurements) suffers from the problem that (i) the devices are tested far from the switching operation conditions which may occur in a real power converter, namely with a very low duty cycle (<0.01, corresponding to negligible self-heating) and with resistive load.…”

Section: Introductionmentioning

confidence: 99%

“…the recoverable increase in on‐resistance induced by the exposure to high voltage [2, 3]. The main causes of the R DSON increase are (i) the charge trapping during high‐voltage off‐state biasing due to the high electric field [4], (ii) the charge trapping due to hot electrons created during hard‐switching transients [5] and (iii) the increase of the junction temperature ( T j ) due to self‐heating [6].…”

Section: Introductionmentioning

confidence: 99%

Fast System to measure the dynamic on‐resistance of on‐wafer 600 V normally off GaN HEMTs in hard‐switching application conditions

Barbato

Meneghini

et al. 2020

IET Power Electronics

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This study presents a novel system to investigate the on-wafer level dynamic properties of GaN-based power transistors in hard-switching application conditions. The system is able to analyse devices with an on-resistance (R DSON) in the range from few ohms to hundreds of ohms, and can be effectively used to improve the development process of GaN high electron mobility transistors (HEMTs) power devices at the wafer level. Contrary to the conventional double-pulse setup, where a resistive load is usually used in combination with a very low duty cycle, the dynamic R DSON is acquired during realistic operating conditions, in a boost converter circuit. Consequently, the authors' system is able to study not only the field-activated trapping processes, but also those induced by hard-switching conditions, i.e. promoted by hot electrons and self-heating. The maximum working voltage (600 V) and the minimum R DSON measurement time after turn-on (2 µs) allow evaluating the operation limit of the devices in a voltage/frequency range close to real switching conditions. Working on the wafer level allows a more realistic assessment of the dynamic R DSON behaviour before the packaging phase, which is very important to improve the production and development process of GaN-HEMT devices.

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Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts

Cited by 19 publications

References 31 publications

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Studing the Effect of Etching Process on the Ohmic Specific Contact Resistance of AlGaN/GaN HEMT

Fast System to measure the dynamic on‐resistance of on‐wafer 600 V normally off GaN HEMTs in hard‐switching application conditions

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