Temperature dependent electroreflectance study of Cu2ZnSnSe4 solar cells

Temperature dependent electrical characterization of thin film Cu2ZnSnSe4solar cells

“…The CZTSe absorber composition was measured by x-ray florescence spectroscopy showing cation ratios of Cu/ (Zn + Sn) = 0.69, Zn/Sn = 1.45, Cu/Zn = 1.16 and Cu/ Sn = 1.69. The details of the preparation of the thin film solar cell device are given in [15]. The individual solar cell (with dimensions 3 × 3 mm 2 ) used for this study shows power conversion efficiency of η = 6.6% with J sc = 27.2 mA cm −2 , V oc = 383 mV and FF = 64%.…”

Electroreflectance of Cu2(Cd1−x,Znx)SnS4Levcenko1, Hadke2, Wong3 et al. 2021Phys. Rev. Materials0000View full textAdd to dashboardCite

“…2(b)], showing evidence of more structural order [37] and possibly a less-pronounced effect of the Cu vacancy on the CCTS valence band [38] compared with kesterite com-pounds. Note that the broadening parameter of CCTS is also lower by 30-50 meV than the broadening of E g transitions determined from the ER on CZTSSe polycrystalline thin films [39,40] and hence additionally points to a better crystal quality of CCTS compounds.…”

SCAPS Modeling of CMTS Solar Cell with ZrS2 Buffer Layer

“…Extensive research is being conducted on copper-based quaternary chalcogenide semiconductors as a cost-effective substitute to conventional absorber materials in solar cells due to their direct bandgap and abundance in availability [4][5][6]. Among them, copper zinc tin sulfide (Cu 2 ZnSnS 4 , i.e., CZTS), copper zinc tin selenide (Cu 2 ZnSnSe 4 , i.e., CZTSe), and sulfurselenium alloy (Cu 2 ZnSn(S x Se 1−x ) 4 , i.e., CZTSSe) based thin-film solar cells have been widely studied [7][8][9][10][11]. Due to a tunable bandgap between 1.4-1.5 eV, CZTS is a suitable solar cell absorber layer [12][13][14].…”