Temperature-Dependent Energy Thresholds for Ion-Stimulated Defect Formation in Solids

Wang, Zhongqiang; Seebauer, Edmund G.

doi:10.1103/physrevlett.95.015501

Cited by 13 publications

(6 citation statements)

References 29 publications

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“…Averaged Efield intensity value was measured at 10 V/m for 6 min, in accordance with guidelines and limits specified by the International Commission on Non-Ionizing Radiation Protection (ICNIRP). 62 The conductivity value s for fruit fly, according to Wang et al, 63 should be about 1.5 S/m at 1,800 MHz, which at 20 C results in a Specific Absorption Energy (SAE) of 270 J/kg at E D 10 V/m, density (r) D 1,000 kg/m 3 , and time (t) D 1,800 sec, according to the formula; SAE D (s¢E_RMS^2)/r t J/kg. SAR was Table 3.…”

Section: Exposure Conditionsmentioning

confidence: 99%

Mobile-phone radiation-induced perturbation of gene-expression profiling, redox equilibrium and sporadic-apoptosis control in the ovary ofDrosophila melanogaster

Manta

Papadopoulou

Polyzos

et al. 2017

Fly

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The daily use by people of wireless communication devices has increased exponentially in the last decade, begetting concerns regarding its potential health hazards. Drosophila melanogaster four days-old adult female flies were exposed for 30 min to radiation emitted by a commercial mobile phone at a SAR of 0.15 W/kg and a SAE of 270 J/kg. ROS levels and apoptotic follicles were assayed in parallel with a genome-wide microarrays analysis. ROS cellular contents were found to increase by 1.6-fold (x), immediately after the end of exposure, in follicles of pre-choriogenic stages (germarium - stage 10), while sporadically generated apoptotic follicles (germarium 2b and stages 7-9) presented with an averaged 2x upregulation in their sub-population mass, 4 h after fly's irradiation with mobile device. Microarray analysis revealed 168 genes being differentially expressed, 2 h post-exposure, in response to radiofrequency (RF) electromagnetic field-radiation exposure (≥1.25x, P < 0.05) and associated with multiple and critical biological processes, such as basic metabolism and cellular subroutines related to stress response and apoptotic death. Exposure of adult flies to mobile-phone radiation for 30 min has an immediate impact on ROS production in animal's ovary, which seems to cause a global, systemic and non-targeted transcriptional reprogramming of gene expression, 2 h post-exposure, being finally followed by induction of apoptosis 4 h after the end of exposure. Conclusively, this unique type of pulsed radiation, mainly being derived from daily used mobile phones, seems capable of mobilizing critical cytopathic mechanisms, and altering fundamental genetic programs and networks in D. melanogaster.

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Section: Exposure Conditionsmentioning

confidence: 99%

Mobile-phone radiation-induced perturbation of gene-expression profiling, redox equilibrium and sporadic-apoptosis control in the ovary ofDrosophila melanogaster

Manta

Papadopoulou

Polyzos

et al. 2017

Fly

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“…3 Mechanical attrition ͑"shot peening"͒ generating plastic deformation and defects modifies the surface chemical kinetic of the reactions, shortening nitriding process by increasing boundary paths obtained in the nanostructured surface. Modern plasma nitriding combines low energy nitrogen ion implantation and posterior thermal diffusion.…”

mentioning

confidence: 99%

Enhanced nitrogen diffusion induced by atomic attrition

Ochoa

Figueroa

Czerwiec

et al. 2006

Applied Physics Letters

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“…We neglected the known effects of temperaturedependent ion-solid interactions, which are observed at temperatures above 300°C and ion energies of about 100 eV and lower. 12 Ion-beam action results in the smaller NC size and the higher NC density ͓Fig. 5͑b͔͒ due to precipitation and nucleation of new NCs by atoms knocked out from initial NCs to the SiO 2 surface.…”

Section: ͑1͒mentioning

confidence: 99%

Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2

Stepina

Двуреченский

Armbrister

et al. 2007

Applied Physics Letters

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Pulsed low-energy (200eV) ion-beam induced nucleation during Ge deposition on thin SiO2 film was used to form dense homogeneous arrays of Ge nanocrystals. The ion-beam action is shown to stimulate the nucleation of Ge nanocrystals when being applied after thin Ge layer deposition. Temperature and flux variation was used to optimize the nanocrystal size and array density required for memory device. Kinetic Monte Carlo simulation shows that ion impacts open an additional channel of atom displacement from a nanocrystal onto SiO2 surface. This results both in a decrease in the average nanocrystal size and in an increase in nanocrystal density.

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Temperature-Dependent Energy Thresholds for Ion-Stimulated Defect Formation in Solids

Cited by 13 publications

References 29 publications

Mobile-phone radiation-induced perturbation of gene-expression profiling, redox equilibrium and sporadic-apoptosis control in the ovary ofDrosophila melanogaster

Mobile-phone radiation-induced perturbation of gene-expression profiling, redox equilibrium and sporadic-apoptosis control in the ovary ofDrosophila melanogaster

Enhanced nitrogen diffusion induced by atomic attrition

Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2

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