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In this study, a liquid metal gas injection method was employed to prepare two-dimensional (2D) chromium oxide (Cr2O3) and chromium nitride (CrN). The process, conducted at room temperature and atmospheric pressure, eliminates the need for high temperature and high pressure conditions typically required by conventional methods, thereby reducing energy consumption. The liquid metal used is nontoxic and can be recycled, making the entire experimental procedure environmentally friendly. The resulting amorphous chromium-based semiconductors were transformed to crystalline Cr2O3 and CrN through annealing and nitridation processes. The fabrication and characterization of photodetectors revealed the unique negative photoresponse behavior of Cr2O3 and CrN, with strong correlations to their metallic resistance characteristics confirmed through temperature-resistance measurements. The field-effect transistors demonstrated the p-type semiconductor properties of Cr2O3 and the n-type semiconductor properties of CrN with energy gaps of 3.3 and 0.6 eV, respectively. This research not only illustrates the application of the liquid metal gas injection method for the preparation of two-dimensional materials but also reveals the correlation between negative photoresponse and metallic resistance, providing valuable insights for the future development of photoresponse and contributing to the academic research on 2D materials and their synthesis methods.
In this study, a liquid metal gas injection method was employed to prepare two-dimensional (2D) chromium oxide (Cr2O3) and chromium nitride (CrN). The process, conducted at room temperature and atmospheric pressure, eliminates the need for high temperature and high pressure conditions typically required by conventional methods, thereby reducing energy consumption. The liquid metal used is nontoxic and can be recycled, making the entire experimental procedure environmentally friendly. The resulting amorphous chromium-based semiconductors were transformed to crystalline Cr2O3 and CrN through annealing and nitridation processes. The fabrication and characterization of photodetectors revealed the unique negative photoresponse behavior of Cr2O3 and CrN, with strong correlations to their metallic resistance characteristics confirmed through temperature-resistance measurements. The field-effect transistors demonstrated the p-type semiconductor properties of Cr2O3 and the n-type semiconductor properties of CrN with energy gaps of 3.3 and 0.6 eV, respectively. This research not only illustrates the application of the liquid metal gas injection method for the preparation of two-dimensional materials but also reveals the correlation between negative photoresponse and metallic resistance, providing valuable insights for the future development of photoresponse and contributing to the academic research on 2D materials and their synthesis methods.
Doping non-metal elements into Cr2O3 can tailor its properties, making it more efficient for applications like sensors or photocatalysis. For this purpose, the current research work presents the impact of nitrogen doping on the structural and optical properties of Cr2O3 thin films. Pure and N-doped Cr2O3 (Cr2O3-xNx) thin films were synthesized using the DC reactive magnetron sputtering approach. The stoichiometry was obtained by raising values of x, where x = 0, 0.125, 0.25, and 0.50. X-ray diffraction analysis confirmed the rhombohedral crystal structure without the presence of any other secondary phase in undoped and N-doped Cr2O3 thin films. Furthermore, crystallinity and average crystallite size have enhanced by doping. Field emission scanning electron micrographs disclosed that the surface morphology of the prepared samples changed considerably with doping. A thorough optical investigation was carried out by spectroscopic ellipsometry. Several optical properties significantly changed with dopant content. The reduction in the optical bandgap from 2.50 eV to 1.82 eV, with N-doping was observed. The study demonstrated that N-doping improves the structural and optical properties that make it a promising candidate for optoelectronic applications.
Improving coating technology and thin film formation by optimizing the experimental parameters has become essential for various industrial and technological fields. This work aims to study the influence of the precursor materials on the physical and electro-optical properties of Cr2O3 thin films. The solutions were prepared using the sol–gel route and deposited on glass slides using the spin coating technique. The structure and morphology of the films were studied using XRD, FT-infrared (IR), and field-emission scan-electron microscope. The results indicated the formation of a high-purity Cr2O3 (Eskolaite) phase in the form of spherical nanoparticles with sizes of 17–25 nm. Three bands appear at 490, 765, and 889 cm − 1 {{\rm{cm}}}^{-1} in the FTIR spectra, which are attributed to Cr – O {\rm{Cr}}{\rm{\mbox{--}}}{\rm{O}} / Cr ═ O {\rm{Cr}}{\rm{═}}{\rm{O}} vibrations. The I–V curves showed linear behavior and good ohmic features. Ultraviolet-visible-near infrared spectra showed that the films are highly transparent, with band gaps in the range of 2.60–2.90 eV, and refractive indices in the range of 1.92–2.25. The sheet resistances, the new figure of merit, the real and fictional dielectric constants, and the optical conductivity were discussed. The Cr2O3 thin films are the best candidates for various utilizations, including solar cells, sensors in the IR region, and energy storage.
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