“…It is found that different fillers lead to changes in electronic structure of nanotubes with n- or p-doping. The insertion of metal halogenides, metal chalcogenides, metallocenes, and metals leads to the Fermi level shift of −0.3–0.4 eV, −0.3 eV, +0.05–0.1 eV, and +0.3 eV [ 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 41 , 42 , 43 , 44 , 46 , 47 , 49 , 50 , 51 , 55 , 56 , 57 , 61 , 62 , 63 , 64 , 65 , 67 , 68 , 69 , 70 , 71 , 72 , 73 , 74 ]. The encapsulation of rubidium iodide leads to the Fermi level shift of +0.2 eV, i.e., donor doping [ 47 ].…”