Temperature dependent growth of InAs/InAsSb superlattices by molecular beam epitaxy for HOT mid-wavelength infrared detectors

Zhu, Lianqing; Liu, Yuan; Lu, Lidan; Gong, Ruixin; An, Heping; Zhang, Dongliang; Zheng, Xiantong; Feng, Yulin; Dong, Mingli

doi:10.1016/j.mssp.2023.107590

Cited by 4 publications

(1 citation statement)

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“…Thus, T2SL Ga-free InAs/InAsSb has been investigated since 2012 due to the potential long carrier lifetime of 412 ns [13] . Several attempts on improving the growth quality of InAs/ InAsSb have been made to enhance the structural and optical properties of the InAs/InAsSb absorption layer [14] . As for the optoelectronic performance of InAs/InAsSb-based MWIR photodetectors, researchers at Northwestern University have optimized InAs/InAsSb-based MWIR photodetectors with an AlAsSb barrier in both planar and mesa configurations.…”

Section: Introductionmentioning

confidence: 99%

Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber

Cao,

Wang,

Peng

et al. 2024

中国光学快报

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In this paper, we demonstrate nBn InAs/InAsSb type II superlattice (T2SL) photodetectors with AlAsSb as the barrier that targets mid-wavelength infrared (MWIR) detection. To improve operating temperature and suppress dark current, a specific Sb soaking technique was employed to improve the interface abruptness of the superlattice with device passivation using a SiO 2 layer. These result in ultralow dark current density of 6.28 × 10 −6 A=cm 2 and 0.31 A=cm 2 under −600 mV at 97 K and 297 K, respectively, which is lower than most reported InAs/InAsSb-based MWIR photodetectors. Corresponding resistance area product values of 3.20 × 10 4 Ω • cm 2 and 1.32 Ω • cm 2 were obtained at 97 K and 297 K. A peak responsivity of 0.39 A/W with a cutoff wavelength around 5.5 μm and a peak detectivity of 2.1 × 10 9 cm • Hz 1=2 =W were obtained at a high operating temperature up to 237 K.

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Section: Introductionmentioning

confidence: 99%