Temperature-dependent investigation of low frequency noise characteristics of mesa-, fin-, and island-isolated AlGaN/GaN HFETs

Manouchehri, Farzin; Valizadeh, Pouya; Kabir, Md. Tanvir

doi:10.1016/j.sse.2013.06.009

Cited by 1 publication

(1 citation statement)

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“…In spite of the indication of the requirement for reducing the dimensions of the isolation features to reduce selfheating, the selected set of isolation-feature geometries that are presented in this paper indicate that a compromise between the expected damage from dry-etching of submicrometer-size isolation features and improvement in self-heating can be made via exploring other isolation-feature geometries (i.e., geometries other than islands). While it has been reported that the closer proximity of the etched side-walls to the channel and interaction between the etching-generated defects and channel electron population of island-isolated devices can negatively impact the noise performance of these devices [17], the aforementioned compromise seems promising toward improving the self-heating at an acceptable cost to low-frequency noise performance of the transistor.…”

Section: Discussionmentioning

confidence: 99%

Impact of Isolation-Feature Geometry on Self-Heating of AlGaN/GaN HFETs

Loghmany

Valizadeh

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2014

IEEE Trans. Electron Devices

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Correlation between the isolation-feature geometry and average channel temperature of AlGaN/GaN heterojunction field-effect transistors (HFETs) is investigated. The reported transistors of this paper were realized on a variety of isolationfeature geometries resembling the following structures: 1) island; 2) fin; 3) comb; and 4) ladder. The average channel temperature of the devices from all categories of the fabricated AlGaN/GaN HFETs was studied using finite element analysis in ANSYS Mechanical. To check the validity of these analyses, results were compared with the experimental data. According to these studies, a less pronounced self-heating is observed in devices, which enjoyed a closer proximity between the drain-edge of the gate and side-walls of the isolation feature. Among these devices, for the same moderate dc bias power of 5 W/mm (i.e., per millimeter width of the transistor), ∼60 K decrease in the average channel temperature is observed. IndexTerms-AlGaN/GaN heterojunction field-effect transistor (HFET), channel temperature, isolation geometry, self-heating.

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Section: Discussionmentioning

confidence: 99%