Temperature-dependent Luminescence Properties of Digital-alloy In(Ga_1−zAl_z)As

Abstract

The optical properties of the digital-alloy (In 0.53 Ga 0.47 As) 1-z /(In 0.52 Al 0.48 As) z grown by molecular beam epitaxy as a function of composition z (z = 0.4, 0.6, and 0.8) have been studied using temperature-dependent photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy. As the composition z increases from 0.4 to 0.8, the PL peak energy of the digital-alloy In(Ga 1-z Al z)As is blueshifted, which is explained by the enhanced quantization energy due to the reduced well width. The decrease in the PL intensity and the broaden FWHM with increasing z are interpreted as being due to the increased Al contents in the digital-alloy In(Ga 1-z Al z)As because of the intermixing of Ga and Al in interface of InGaAs well and InAlAs barrier. The PL decay time at 10 K decreases with increasing z, which can be explained by the easier carrier escape from InGaAs wells due to the enhanced quantized energies because of the decreased InGaAs well width as z increases. The emission energy and luminescence properties of the digitalalloy (InGaAs) 1-z /(InAlAs) z can be controlled by adjusting composition z.

A 10-channel Multiple Quantum Well Array Integrated with Selective Area Grown InGaAsP Layers on InP

“…The selective area growth (SAG) of III-V compound semiconductors has attracted considerable interest as a powerful tool for monolithically integrated laser diodes such as an electro-absorption modulated laser, a broadband super-luminescent diode, and a multi-wavelength laser array [1][2][3][4]. SAG is a growth process on a dielectric maskpatterned semiconductor substrate.…”

“…SAG has been widely studied by many groups for different material systems, various growth conditions, and pattern configurations [1][2][3][4][5][6][7]. During the SAG process, the epitaxial layer grown on an opened area will undergo a dimensional change caused by the growth-rate enhancement of the group III precursors, as well as a compositional change from the different diffusion characteristics of each precursor, simultaneously.…”