Temperature-dependent luminescent properties of dual-wavelength InGaN LEDs

Arteev, D. S.; Sakharov, A. V.; Николаев, А. Е.; Lundin, W. V.; Tsatsulnikov, A. F.

doi:10.1016/j.jlumin.2021.117957

Cited by 12 publications

(5 citation statements)

References 33 publications

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“…The fact that external quantum efficiency at low temperatures exceeds efficiency at room temperature (in our case, UV LEDs at I ≤ 0.2 mA) is explained by a) decrease of nonradiative recombination rate; b) increase of radiative recombination due to better overlap of the electron and hole wave functions (radiative recombination coefficient depends on temperature in inverse proportion to T 3/2 [9]); c) decrease of tunnel leakage of carriers from a quantum well (QW) through the bulk charge region [10,11]; d) at T < 80 K the transfer of some carriers into quantum wells is ballistic or quasiballistic [5]. This improves the transport of carriers to active zones.…”

Section: Discussionmentioning

confidence: 99%

“…A drop of luminescence intensity and external quantum efficiency with temperature rise was described in several papers in the ranges: from 280 to 340 [1], from 300 to 500 [2], from 290 to 360 K [3]. In this respect, research of radiating [4,5] and noise characteristics [6] of lightemitting diodes at low temperatures is promising since they can be used at negative ambient temperatures (in freezing chambers). Temperature decrease increases the luminous flux, reduces the LED degradation rate, reduces the semiconductor diode noise density.…”

Section: Introductionmentioning

confidence: 99%

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Influence of low temperature on the electrophysical and noise characteristics of UV LEDs based on InGaN/GaN quantum well structures

Ivanov

Klochkov

2022

Semiconductors

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Comparison of optical power, external quantum efficiency in InGaN/GaN UV LEDs at room temperature and liquid nitrogen temperature is carried out. The spectral densities of the current low-frequency noise have been investigated. The mechanisms of carrier transport, the formation of low-frequency noise, and the dependences of the rates of radiative and nonradiative recombination at room and nitrogen temperatures are considered. Keywords: External quantum efficiency, low-frequency noise, carrier transport, defect tunneling.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Influence of low temperature on the electrophysical and noise characteristics of UV LEDs based on InGaN/GaN quantum well structures

Ivanov

Klochkov

2022

Semiconductors

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“…It should be noted that the high-to low-temperature PL intensity ratio is often interpreted as IQE, which might be incorrect as IQE at low temperature may not equal 100% [35,36]. Moreover, PL intensity may have maximum not at the lowest temperature [37,38]. However, in our case, these values are very close to each other, probably indicating that there is neither carrier localization in the barrier layers nor strong non-radiative recombination in the barrier or active layers at low temperature.…”

Section: Localized-state Ensemble (Lse) Model Analysismentioning

confidence: 99%

Localized-state ensemble model analysis of InGaN/GaN quantum well structures with different dislocation densities

Arteev¹,

Sakharov²,

Zavarin³

et al. 2021

Semicond. Sci. Technol.

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The influence of dislocations on luminescence of InGaN/GaN multiple quantum wells was investigated by temperature-dependent and time-resolved room-temperature photoluminescence measurements and analyzed via localized-state ensemble model. The results show that dislocations decrease non-radiative recombination time and do not affect either radiative recombination time or non-radiative recombination mechanism. Moreover, dislocation-related broadening, increasing linearly with increased dislocation density, was found to take place. However, a significant part of spectral width (∼55 meV) is not defined by either dislocation-induced or alloy- and thermally-induced broadening, revealing the existence of other broadening mechanisms (e.g. carrier–carrier scattering-induced broadening).

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“…This effect is derived from a decreased overlap of the electron and hole wave functions, which in turn is a consequence of non-uniformity in the polarization direction. [19][20][21][22][23][24] The use of nonpolar or semipolar GaN has been suggested as a means of addressing this problem.…”

Section: Introductionmentioning

confidence: 99%

Effect of reactive gas condition on nonpolar AlN film growth on MnS/Si (100) by reactive DC sputtering

Morita

Ishibashi²,

Takahashi³

et al. 2022

Jpn. J. Appl. Phys.

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The effects of reactive gas flow conditions on nonpolar AlN film growth on MnS/Si　(100) substrates using reactive DC magnetron sputtering were investigated. During AlN deposition at a substrate temperature of 750 °C, the MnS surface can be unintentionally nitrided, resulting in a decrease in the crystallinity of the AlN. Low temperature growth of the AlN layer at 300 °C prevents this nitridation and results in the crystallization of nonpolar AlN. A N2 flow equal to 30% of the Ar sputtering gas flow was found to improve the crystallinity of the nonpolar AlN and to reduce nitrogen defects, which play an important role in interfacial reactions. Nitrogen defects promote the formation of alloys such as AlMn and MnSi that degrade the interface and can significantly decompose the MnS. A higher proportion of N2 improves the nonpolar AlN crystallinity, reduces the concentration of defects and suppresses reactions at the AlN/MnS interface.

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Temperature-dependent luminescent properties of dual-wavelength InGaN LEDs

Cited by 12 publications

References 33 publications

Influence of low temperature on the electrophysical and noise characteristics of UV LEDs based on InGaN/GaN quantum well structures

Influence of low temperature on the electrophysical and noise characteristics of UV LEDs based on InGaN/GaN quantum well structures

Localized-state ensemble model analysis of InGaN/GaN quantum well structures with different dislocation densities

Effect of reactive gas condition on nonpolar AlN film growth on MnS/Si (100) by reactive DC sputtering

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