Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure

Sun, Chen; Zheng, Zijie; Han, Kaizhen; Samanta, Subhranu; Zhou, Jiuren; Kong, Qiwen; Zhang, Jishen; Xu, Haiwen; Kumar, Akash; Wang, Chengkuan; Gong, Xiao

doi:10.1109/led.2021.3121677

Cited by 27 publications

(14 citation statements)

References 30 publications

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“…In addition, proper capacitance matching between the layers enhances the reliability of the devices by reducing the electric field across the dielectric. [32,48,[50][51][52] Figure 1d shows the current versus voltage at different voltage sweep ranges in the MFM structure, obtained through positive-up-negative-down (PUND) measurements at a frequency of 100 kHz. Figure 1e shows the polarization versus voltages at different voltage sweep ranges in the PUND measurements, showing a remnant polarization (2P r ) of %46 μC cm À2 .…”

Section: Electrical Characteristics Of the Fetftsmentioning

confidence: 99%

Analog Synaptic Devices Based on IGZO Thin‐Film Transistors with a Metal–Ferroelectric–Metal–Insulator–Semiconductor Structure for High‐Performance Neuromorphic Systems

Kwon,

Park,

Shin

et al. 2023

Advanced Intelligent Systems

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A ferroelectric thin‐film transistor (FeTFT)‐based synaptic device with an indium–gallium–zinc oxide (IGZO) channel and a metal–ferroelectric–metal–insulator–semiconductor (MFMIS) structure is reported. The fabricated FeTFT exhibits a highly linear conductance response (|α| = 0.21) with a large dynamic range (Gmax/Gmin ≈ 53.2), although identical program pulses are applied to the device. In addition, because the inner metal layer of the FeTFTs has an MFMIS structure, the electric field is uniformly applied to the entire IGZO channel, which reduces the cycle‐to‐cycle variation (σ = 0.47%) in the conductance responses. In the system simulation with the measured synaptic characteristics, the high classification accuracy of ≈97.0% is achieved in the MNIST image set, verifying the feasibility of FeTFT‐based neuromorphic systems.

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Section: Electrical Characteristics Of the Fetftsmentioning

confidence: 99%

Analog Synaptic Devices Based on IGZO Thin‐Film Transistors with a Metal–Ferroelectric–Metal–Insulator–Semiconductor Structure for High‐Performance Neuromorphic Systems

Kwon,

Park,

Shin

et al. 2023

Advanced Intelligent Systems

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“…As one method to solve the issues, logic‐in‐memory (LiM) devices that combine the memory unit and the logic unit have been proposed, and the HfZrO x (HZO)‐based ferroelectric field‐effect transistor (FeFET) is one of the promising candidates for LiM devices because of its sufficient remanent polarization ( P r ), low power, high speed, high scalability, and good compatibility with complementary metal‐oxide‐semiconductor technology. [ 1,2 ]…”

Section: Introductionmentioning

confidence: 99%

“…As one method to solve the issues, logic-inmemory (LiM) devices that combine the memory unit and the logic unit have been proposed, and the HfZrO x (HZO)-based ferroelectric field-effect transistor (FeFET) is one of the promising candidates for LiM devices because of its sufficient remanent polarization (P r ), low power, high speed, high scalability, and good compatibility with complementary metal-oxide-semiconductor technology. [1,2] However, when the HZO film is directly stacked on the Si substrate, an unintentional interfacial layer (IL) of SiO x is formed, resulting in a metal/ferroelectric film/insulator/semiconductor (MFIS) structure. The presence of IL causes several critical problems in ferroelectric behavior, inducing a significant amount of charge trapping, [3,4] causing a huge gate voltage (V g ) drop due to a lower dielectric constant (≈3.9), [5] and forming a strong depolarization field.…”

mentioning

confidence: 99%

Oxygen Scavenging in HfZrO_x‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

Kim

Kuk

Kim

et al. 2023

Adv Elect Materials

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the internet of things, big-data analysis, and machine learning are required. As one method to solve the issues, logic-inmemory (LiM) devices that combine the memory unit and the logic unit have been proposed, and the HfZrO x (HZO)-based ferroelectric field-effect transistor (FeFET) is one of the promising candidates for LiM devices because of its sufficient remanent polarization (P r ), low power, high speed, high scalability, and good compatibility with complementary metal-oxide-semiconductor technology. [1,2] However, when the HZO film is directly stacked on the Si substrate, an unintentional interfacial layer (IL) of SiO x is formed, resulting in a metal/ferroelectric film/insulator/semiconductor (MFIS) structure. The presence of IL causes several critical problems in ferroelectric behavior, inducing a significant amount of charge trapping, [3,4] causing a huge gate voltage (V g ) drop due to a lower dielectric constant (≈3.9), [5] and forming a strong depolarization field. [5,6] In particular, the interfacial charge trap density of ≈10 12 cm −2 is involved in breakdown and fatigue induced by charge trapping, [3,4] which causes issues of low endurance and read delay in FeFETs. [3,4,7] On the other hand, beneficial effects such as charge-assisted polarization [8] and leakage reduction [9] by IL are also exerted. Therefore, IL engineering to reduce thickness and unnecessary charge trapping is a promising direction in improving FeFET performances such as switching voltage (V sw ), memory window (MW), endurance, and retention properties.As attempts for IL engineering, methods such as the insertion of the additional IL, the modification by plasma treatment, and the inhibition of the IL formation have been reported. For the additional IL, Al 2 O 3 layers that can reduce leakage and improve endurance properties were explored, however, V sw increased due to an additional V g drop across the additional IL. [9] Alternatively, the insertion of ZrO 2 , which can improve the crystalline quality of the ferroelectric orthorhombic phase of HZO, improved P r and endurance property, but did not improve V sw . [10,11] Forming SiON by replacing SiO x was beneficial for endurance and retention properties, but a high-temperature process of 850 °C was required. [12] Treatment of IL with N 2 plasma improved endurance property only and had no effect on V sw . [13] In order to inhibit IL growth, microwave annealing, [14,15] The authors demonstrate improved switching voltage, retention, and endurance properties in HfZrO x (HZO)-based n/p-ferroelectric field-effect transistors (FeFETs) via oxygen scavenging. Oxygen scavenging using titanium (Ti) in the gate stack successfully reduce the thickness of interfacial oxide between HZO and Si and the oxygen vacancy at the bottom interface of the HZO film. The n/p-FeFETs with scavenging exhibit an immediate read-afterwrite with stable retention property and improved endurance property. In particular, n-FeFET with scavenging exhibits excellent endurance property that does not show breakdown up t...

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“…Recently, oxide semiconductors (OSs) have attracted great attention as the channel materials of Fe-FETs [14], [15], [16], [17], [18], [19], [20], [21], [22], [23]. Compared to the amorphous Si FETs, OS FETs generally have higher mobilities (>10 cm 2 •V −1 •s −1 ) while keeping a back-end-ofline (BEOL)-compatible process thermal budget for monolithic 3-D integration [24], [25].…”

mentioning

confidence: 99%

Back-End-of-Line-Compatible Fin-Gate ZnO Ferroelectric Field-Effect Transistors

Kong

Liu

Zheng

et al. 2023

IEEE Trans. Electron Devices

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We report the back-end-of-line (BEOL)compatible 3-D oxide semiconductor (OS) fin-gate ferroelectric field-effect transistors (Fe-FETs) featuring atomic layer deposition (ALD)-grown zinc oxide (ZnO) channel and Zr-doped HfO 2 (HZO) ferroelectric dielectric. Both ZnO and HZO are able to conformally cover the fin-shaped tungsten (W) metal gate with uniform thickness on all surfaces. With the optimization of ALD for the growth of the ZnO channel film and extensive gatestack engineering, our ZnO Fe-FETs show excellent electrical characteristics, including memory windows (MWs) of 1.9 and 1.5 V with the channel length (L ch ) of 1 µm and 50 nm, respectively, the high endurance of 10 8 cycles, long-term retention of more than ten years at room temperature, robust ON/OFF ratio of more than six orders, and good linearity of the multistate conductance characteristics. Together with the capability to suppress the device-to-device threshold voltage (V th ) variation due to the unique fin-gate structure, our devices demonstrate tremendous potential for future ultrahigh-density 3-D integrated computing applications.

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Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure

Cited by 27 publications

References 30 publications

Analog Synaptic Devices Based on IGZO Thin‐Film Transistors with a Metal–Ferroelectric–Metal–Insulator–Semiconductor Structure for High‐Performance Neuromorphic Systems

Analog Synaptic Devices Based on IGZO Thin‐Film Transistors with a Metal–Ferroelectric–Metal–Insulator–Semiconductor Structure for High‐Performance Neuromorphic Systems

Oxygen Scavenging in HfZrO_x‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

Back-End-of-Line-Compatible Fin-Gate ZnO Ferroelectric Field-Effect Transistors

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Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure

Cited by 27 publications

References 30 publications

Analog Synaptic Devices Based on IGZO Thin‐Film Transistors with a Metal–Ferroelectric–Metal–Insulator–Semiconductor Structure for High‐Performance Neuromorphic Systems

Analog Synaptic Devices Based on IGZO Thin‐Film Transistors with a Metal–Ferroelectric–Metal–Insulator–Semiconductor Structure for High‐Performance Neuromorphic Systems

Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

Back-End-of-Line-Compatible Fin-Gate ZnO Ferroelectric Field-Effect Transistors

Contact Info

Product

Resources

About

Oxygen Scavenging in HfZrO_x‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement