Temperature-dependent phase transition of CuZnS thin films and its effects on morphological, optical and electrical properties

Sundaram, Saravanan Krishna; Selvasekarapandian, S.; Panneerselvam, Vengatesh; Salammal, Shyju Thankaraj

doi:10.1016/j.tsf.2021.138810

Cited by 7 publications

(7 citation statements)

References 44 publications

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“…High transmittance in the visible and infrared regions of the wavelength was observed as the flow rate increased. The increase in transmittance can be attributed to the increase in crystallinity of the film as well as the morphological transition as the flow rate increases [2]. The reduction in the transmittance of the film at 1.0 dm 3 min −1 could be a result of the nonhomogenous deposition of grains on the substrate as shown in the SEM image.…”

Section: = -( ) T 10mentioning

confidence: 92%

“…The fascinating device-related properties of semiconductor nanostructures have drawn researchers' attention over time [1][2][3][4]. Organic and inorganic semiconductor materials have long attracted interest because of their band gap in photovoltaic and solar cell applications.…”

Section: Introductionmentioning

confidence: 99%

“…In the field of optoelectronic devices, copper zinc sulfide (CuZnS), a unique and less explored semiconductor material, can take the place of numerous expensive compound semiconductors. They exhibit excellent and distinctive electrical, optical, and thermal properties, that are useful for solid-state device applications [2]. As a result, they can be employed as a possible component in the manufacture of various optoelectronic devices and absorbers for solar cells [5].…”

Section: Introductionmentioning

confidence: 99%

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Opto-electronic properties of copper-zinc-sulfide thin films grown via metalorganic-chemical vapor deposition technique at different flow rates

et al. 2023

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In this work, copper zinc sulfide (CZS) ternary thin films were prepared from the pyrolysis of a Bis-(morpholinodithiato-s,s’)-Cu-Zn precursor using metal-organic chemical vapor deposition technique maintained at 450 ℃ in ambient nitrogen as the carrier gas. The deposition flow rate was varied to study its effect on the optoelectronic properties of CZS films. The particle-induced X-ray emission technique (PIXE) of the prepared single solid source precursor shows the presence of copper, zinc, and sulfur. The Fourier transform infrared spectrophotometer of the precursor reveals the metal-metal bond attachment to the ligand at a very low wavenumber. The XRD spectra reveal the formation of the hexagonal closed-packed structure of CZS films with a preferred orientation along the [111] direction. The film crystallite size is found to increase from 10.4 to 12.2 nm as the flow rate increases, while the dislocation density and stress decrease as the deposition flow rate increases. The SEM analysis revealed an improvement in the growth rate of the grains as the flow rate increased. The transmittance of the deposited CZS films was found to increase from 58% to 84.2% in the infrared region with an increase in band gap from 3.08 – 3.64 eV as the flow rate increased. The deposited film shows ohmic properties and an increase in conductivity from 0.243 to 0.847 (Ω cm)-1, while the resistivity decreases as the flow rate increases. These observations provide room for the deposited CZS film to serve as a potential material for optoelectronics and window layer solar cell devices.

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Section: = -( ) T 10mentioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Opto-electronic properties of copper-zinc-sulfide thin films grown via metalorganic-chemical vapor deposition technique at different flow rates

et al. 2023

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“…Earlier, several synthesis techniques for CZS have been reported including sol–gel, hot injection, chemical bath deposition (CBD), chemical vapor deposition (CVD), sputtering technique, and spray pyrolysis . Each of these techniques has its advantages and disadvantages in terms of cost, complexity, and control over the synthesis process.…”

Section: Introductionmentioning

confidence: 99%

“…[19][20][21]3 The optical and electrical properties of CZS NCs can be further tailored by adjusting the Cu/Zn ratios in the elemental compositions by employing different synthetic techniques. 22 Earlier, several synthesis techniques for CZS have been reported including sol−gel, 23 hot injection, 2 chemical bath deposition (CBD), 24 chemical vapor deposition (CVD), 25 sputtering technique, 26 and spray pyrolysis. 20 Each of these techniques has its advantages and disadvantages in terms of cost, complexity, and control over the synthesis process.…”

Section: Introductionmentioning

confidence: 99%

Microwave-Assisted Synthesis of CuZnS Nanocrystals for Spectrally Flat Visible Light Photodetector Application Using a ZnO/CuZnS Heterojunction

Dahiya,

Singh,

Pandey

et al. 2024

ACS Appl. Opt. Mater.

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A microwave-assisted technique has been opted for scalable synthesis of ternary copper zinc sulfide nanocrystals (CZS NCs) and utilized for visible light photoconductor fabrication. These CZS NCs comprise 2D hexagonal sheets of ∼60 nm in approximate edge with a thickness of ∼9 nm, in combination with smaller size nanoparticles with an average size of ∼13 nm. The absorption spectra of CZS NCs demonstrated broad absorbance ranging from 300 to 750 nm, and the calculated bandgap of CZS NCs was found to be 1.65 eV. To realize their applicability in electronic devices, a lateral heterostructure photoconductor has been fabricated in a photoconductor geometry by using a sol−gel-derived ZnO thin film as a charge transport layer. The external quantum efficiency (EQE) at a 10 V external bias was approximately 10% within the range of 350 to 750 nm, whereas the device has a responsivity and detectivity of 4 A/W and 1 × 10 12 Jones within that range, respectively. The device has a higher EQE (25%) with detectivity (1.6 × 10 12 Jones) within the 300−350 nm range due to the photocurrent generation from ZnO.

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Structural, Optical, and Electrical Properties of Cu-Doped ZnS Nanoparticles Prepared by Solid-State Reaction

Mummadi,

Shaik

2024

Braz J Phys

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Temperature-dependent phase transition of CuZnS thin films and its effects on morphological, optical and electrical properties

Cited by 7 publications

References 44 publications

Opto-electronic properties of copper-zinc-sulfide thin films grown via metalorganic-chemical vapor deposition technique at different flow rates

Opto-electronic properties of copper-zinc-sulfide thin films grown via metalorganic-chemical vapor deposition technique at different flow rates

Microwave-Assisted Synthesis of CuZnS Nanocrystals for Spectrally Flat Visible Light Photodetector Application Using a ZnO/CuZnS Heterojunction

Structural, Optical, and Electrical Properties of Cu-Doped ZnS Nanoparticles Prepared by Solid-State Reaction

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