Temperature-dependent photoluminescence and mechanism of CdS thin film grown on Si nanoporous pillar array

Effect of boron-doping on the electroluminescence properties of CdS/Si heterostructure based on Si nanoporous pillar array

“…3(b), the peak position and peak shape profile of the B band agree well with the PL of Si-NPA. So, the B band is ascribed to Si-NPA [17] and the other emissions to CdS. The G band is considered to be originated from Cd interstitial (Cd i ) to valence band (VB) [10].…”