Temperature-Dependent Photoluminescence in Coupling Structures of CdSe Quantum Dots and a ZnCdSe Quantum Well

Jin, Hua; Zhang, Ligong; Zheng, Zhong; An, Linan; Lu, Yunxiang; Zhang, Jiying; Fan, X.W.; Shen, Dezhen

doi:10.1088/0256-307x/22/6/061

Cited by 2 publications

(2 citation statements)

References 16 publications

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“…However the value of activation energy is much larger than that of PSF3 and PSF11 and the binding energy of the exciton in the Si bulk (the exciton binding of silicon=15meV). Therefore, in a nanoparticle exciton cannot be broken up by thermal phonons, thus, the higher activation energy possibly associated to the exciton tunneling process [43].…”

Section: Pl Intensity Studymentioning

confidence: 99%

Correlation between optical properties surface morphology of porous silicon electrodeposited by Fe 3+ ion

Mabrouk

Lorrain

Haji

et al. 2015

Superlattices and Microstructures

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In this paper, we analyze the photoluminescence spectra (PL) of porous silicon (PS) layer which is elaborated by electrochemical etching and passivated by Fe 3+ ions (PSF) via current density, electro-deposition and temperature measurements. We observe unusual surface morphology of PSF surface and anomalous emission behavior. The PSF surface shows regular distribution of cracks, leaving isolated regions or "platelets" of nearly uniform thickness. These cracks become more pronounced for high current densities. The temperature dependence of the PL peak energy (E PL ) presents anomalous behaviors ,i.e., the PL peak energy shows a successive red/blue/redshift (S-shaped behavior) with increasing temperature that we attribute to the existence of strong potential fluctuations induced by the electrochemical etching of PS layers. A competition process between localized and delocalized excitons is used to discuss these PL properties. In this case, the potential confinement plays a key role on the enhancement of PL intensity in PSF. To explain the temperature dependence of the PL intensity, we have proposed a recombination model based on the tunneling and dissociation of excitons.

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Section: Pl Intensity Studymentioning

confidence: 99%

Correlation between optical properties surface morphology of porous silicon electrodeposited by Fe 3+ ion

Mabrouk

Lorrain

Haji

et al. 2015

Superlattices and Microstructures

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show abstract

“…Ten et al have shown that the increase in temperature could increase the tunneling process [35]. However, Hua et al confirm that thermal dissociation of excitons increases with temperature, which favors the leakage of excitons from Q Ds to Q Ws at lower energy levels [36]. In Figure 9, we represent the integrated intensity of PL as a function of the inverse of the temperature.…”

Section: The Intensity Of Pl As a Function Of The Inverse Of Temperaturementioning

confidence: 94%

Optical Study of Porous Silicon Layers Produced Electrochemically for Photovoltaic Application

Salah¹

2021

Solar Cells - Theory, Materials and Recent Advances

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In previous years, porous silicon is rapidly attracting increasing interest in various fields and has received a great deal of attention from researchers because of its potential use in a variety of industrial applications such as photovoltaic device applications. The present study conclusively suggested that in order to prepare porous silicon samples, we need to determine the optimal conditions that lead to the increase of the optical efficiency. Porous silicon layers were elaborated by the electrochemical etching method using doped-type ⟨100⟩-oriented silicon substrate. The photoluminescence (PL) and the spectroscopic ellipsometry (SE) measurements were used to calculate the physical and optical parameters (porosity, thickness) (refractive index and extinction coefficient). This study can give a very important interest in the photovoltaic field.

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Temperature-Dependent Photoluminescence in Coupling Structures of CdSe Quantum Dots and a ZnCdSe Quantum Well

Cited by 2 publications

References 16 publications

Correlation between optical properties surface morphology of porous silicon electrodeposited by Fe 3+ ion

Correlation between optical properties surface morphology of porous silicon electrodeposited by Fe 3+ ion

Optical Study of Porous Silicon Layers Produced Electrochemically for Photovoltaic Application

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