Temperature-dependent Photoluminescence of Boron-doped ZnO Nanorods

Kim, Soaram; Park, Hyunggil; Nam, Giwoong; Yoon, Hyunsik; Kim, Jong Su; Son, Jeong‐Sik; Lee, Sang‐Heon; Leem, Jae‐Young

doi:10.5012/bkcs.2013.34.11.3335

Cited by 21 publications

(12 citation statements)

References 39 publications

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“…Additionally, nitrogen-or boron-associated ZnO luminescence was not observed from the high-resolution photoluminescence spectroscopic analyses (Supplementary Figure S5). 39,40 This suggested that the atoms in hBN were not incorporated into the ZnO nanostructures during the vdW-MOVPE process.…”

Section: Nanoarchitectural Vdw Heteroepitaxy Of Zno On Hbnmentioning

confidence: 99%

Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN

Hong

Kim

et al. 2014

NPG Asia Mater

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Heteroepitaxy of semiconductors on two-dimensional (2-d) atomic layered materials enables the use of flexible and transferable inorganic electronic and optoelectronic devices in various applications. Herein, we report the shape-and morphology-controlled van der Waals (vdW) epitaxy of ZnO nanostructures on hexagonal boron nitride (hBN) insulating layers for an architectured semiconductor integration on the 2-d layered materials. The vdW surface feature of the 2-d nanomaterials, because of the surface free of dangling bonds, typically results in low-density random nucleation-growth in the vdW epitaxy. The difficulty in controlling the nucleation sites was resolved by artificially formed atomic ledges prepared on hBN substrates, which promoted the preferential vdW nucleation-growth of ZnO specifically along the designed ledges. Electron microscopy revealed crystallographically domain-aligned incommensurate vdW heteroepitaxial relationships, even though ZnO/hBN is highly latticemismatched. First-principles theoretical calculations confirmed the weakly bound, noncovalent binding feature of the ZnO/hBN heterostructure. Electrical characterizations of the ZnO nanowall networks grown on hBN revealed the excellent electrical insulation properties of hBN substrates. An ultraviolet photoconductor device using the vdW epitaxial ZnO nanowall networks/ hBN heterostructure was further demonstrated as an example of hBN substrate-based device applications. The architectured heteroepitaxy of semiconductors on hBN is thus expected to create many other device arrays that can be integrated on a piece of substrate with good electrical insulation for use in individual device operation.

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Section: Nanoarchitectural Vdw Heteroepitaxy Of Zno On Hbnmentioning

confidence: 99%

Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN

Hong

Kim

et al. 2014

NPG Asia Mater

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“…The strongest maximum is related not only to NBE processes but also transitions related to free exiton relaxation, longitudinal optical (LO)-phonon replicas, free-to-neutral acceptor transitions, etc. [38]. so the value differs slightly from 3.22-3.24 eV typical for ZnO.…”

Section: Resultsmentioning

confidence: 87%

“…The deep-level characteristic green emission band is found at 498 ± 10 nm (2.43-2.54 eV). The green band is originated from intrinsic V Zn , V O and Z i defects [38,39].…”

Section: Resultsmentioning

confidence: 99%

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Electrochemicaly formed ZnO and Au/ZnO opal films

et al. 2020

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ZnO inverse opal films were synthesized electrochemically using aqueous and non-aqueous zinc acetate electrolytes and ITO deposited polystyrene opal matrices. The following thermal oxidation in air was performed for further application in optoelectronics. The overall composition and deposition potentials varied to reach uniform porous films with opal structure. Most uniform photonic film of ZnO with zincite structure has been deposited from DMSO electrolyte. Photoluminescence spectra of the ZnO coverages showed more complex spectra for precipitates sedimented from aqueous baths than from DMSO. Less deficient films of opal ZnO films deposited from DMSO demonstrated lower scattering effect compared to coverages deposited from aqueous electrolytes. Magnetron sputtering was applied for Au/ZnO composite film formation. The optical spectra of the Au/ZnO composite coverages correlate to spectra of uniform Au opal films.

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“…The strong and narrow UV emission peak, centered at 3.24 eV for all cases, results from merging of the various exciton-related emission near the band-edge, including recombination of free excitons and its longitudinal optical (LO)-phonon replicas, [33] free-to-neutral acceptor transitions, [34] and donor-acceptor pair recombination, [35] depending on the local lattice configuration and the presence of defects. [36][37][38] The strong and narrow UV emission peak, centered at 3.24 eV for all cases, can be assigned to the donor-acceptor transition. From the Figure 2a, we can also observe a broad visible level emission that expands from green to orange color wavelength.…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence Study of the Influence of Additive Ammonium Hydroxide in Hydrothermally Grown ZnO Nanowires

Dahiya¹,

Boubenia²,

Franzò³

et al. 2018

Preprint

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We report the influence of ammonium hydroxide (NH4OH), as growth additive, on zinc oxide nanomaterial through the optical response obtained by photoluminescence (PL). A lowtemperature hydrothermal process is employed for the growth of ZnO nanowires (NWs) on seedless Au surface. A more than two order of magnitude change in ZnO NW density is demonstrated via careful addition of NH4OH in the growth solution. Further, we show by systematic experimental study and PL characterization data that the addition of NH4OH can degrade the optical response of ZnO NWs produced. The increase of growth solution basicity with the addition of NH4OH may slowly degrade the optical response of NWs by slowly etching its surfaces, increasing the point defects in ZnO NWs. The present study demonstrates the importance of growth nutrients to obtain quality controlled density tunable ZnO NWs on seedless conducting substrates.

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Temperature-dependent Photoluminescence of Boron-doped ZnO Nanorods

Cited by 21 publications

References 39 publications

Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN

Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN

Electrochemicaly formed ZnO and Au/ZnO opal films

Photoluminescence Study of the Influence of Additive Ammonium Hydroxide in Hydrothermally Grown ZnO Nanowires

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