Temperature-dependent photoluminescence of InSb/InAs nanostructures with InSb thickness in the above-monolayer range

Firsov, D. D.; Комков, О. С.; Соловьев, В. А.; Kop’ev, P. S.; Иванов, С. В.

doi:10.1088/0022-3727/49/28/285108

Cited by 29 publications

(14 citation statements)

References 23 publications

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“…The infrared transmission measurements were performed using a Vertex 80 Fourier-transform infrared (FTIR) spectrometer equipped with an SiC globar as the IR radiation source, a KBr beamsplitter, and a pyroelectric deuterated L-alanine-doped triglycine sulphate (DLaTGS) photodetector. A PL measurement setup [ 13 ] based on the same FTIR spectrometer (equipped instead with a CaF 2 beamsplitter and a Si diode photodetector) was employed to obtain the temperature dependences of the PL spectra. The samples were placed into a Janis CCS-150 closed-cycle helium cryostat, and a 405-nm semiconductor laser diode was used as an excitation source.…”

Section: Methodsmentioning

confidence: 99%

Polyvinylpyrrolidone as a Stabilizer in Synthesis of AgInS2 Quantum Dots

et al. 2022

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A synthesis protocol of polyvinylpyrrolidone-capped AgInS2 quantum dots in aqueous solution is reported. Nanoparticle morphology and chemical composition were studied by means of TEM, XRD, XPS, and FTIR. The obtained quantum dots were luminescent in the visible range. The photoluminescence intensity dependence on the polyvinylpyrrolidone amount was demonstrated. The wavelength of the emission maximum varied with changing the [Ag]:[In] molar ratio. The temperature dependence of the photoluminescence intensity of the polyvinylpyrrolidone-capped AgInS2 quantum dots was investigated within the temperature range of 11–294 K.

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Section: Methodsmentioning

confidence: 99%

Polyvinylpyrrolidone as a Stabilizer in Synthesis of AgInS2 Quantum Dots

et al. 2022

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“…A transmission electron microscope was used to visualize the structure of the grown samples. Photoluminescence (PL) spectra of the investigated structures were obtained using the measurement setup [9] based on a VERTEX 80 Fourier-transform infrared spectrometer operating in step scan mode. The low temperature (T = 11K) of the samples was provided by a Janis CCS-150 closed-cycle helium cryostat.…”

Section: Samples and Experimentsmentioning

confidence: 99%

Investigation of infrared photoluminescence spectra of Ge_1-x-ySi_xSn_y/Si nanostructures

Kolyada

Karaborchev

Firsov

et al. 2022

J. Phys.: Conf. Ser.

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This work investigates the luminescence properties of pseudomorphic nanostructures with Ge1-x-y Si x Sn y /Si superlattices (SL) grown on silicon substrates by molecular beam epitaxy. It was shown that the addition of Sn (y = 0.07) to the alloy layers within the structures results in a significant shift of the photoluminescence (PL) spectra towards longer wavelengths (2.0-3.5 μm) compared to similar Ge0.7Si0.3/Si superlattices. A series of experiments involving etching the structures to different depths have shown that the observed photoluminescence occurs exactly in the Ge1-x-y Si x Sn y /Si SL region, with the sublinear nature of the PL power dependence indicating the probable participation of defects in radiative recombination. A significant increase in low-temperature PL was observed with a decrease in the thickness of narrow-gap SL layers from 6 to 2 nm, as well as with an increase in the number of superlattice periods from 10 to 30. The obtained structures exhibit relatively good temperature stability of luminescence, which is preserved up to 160 K. Thus, the current work demonstrates the possibility of creating mid-wave IR emitting epitaxial structures on silicon substrates.

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“…Сигнал ФО (рис. 9), представляющий собой ОФК получен от эпитаксиального слоя GaSb [90], входящего в состав более сложной гетероструктуры, описанной в [91]. По периоду этих осцилляций было определено встроенное электрическое поле F = 84.7 kV/cm.…”

Section: фосфид индия (Inp) и антимонид галлияunclassified

Инфракрасное Фотоотражение Полупроводниковых Материалов a-=sup=-3-=/Sup=-B-=sup=-5-=/Sup=- ( О Б З О Р )

Комков¹

2021

Физика Твердого Тела

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Photoreflectance is a contactless type of modulation optical spectroscopy. It is used to study the band structure features of monocrystalline semiconductors, their doping level, the composition of alloys, as well as surface and interface band bending. Using high-quality GaAs as an example, the possibilities of describing the photoreflectance lineshape by one-electron and exciton models are demonstrated. The spectra of ultrapure samples of this material exhibit an oscillating structure well described by excitonic effects. For III-V alloys, a review of photoreflectance results concerning the effect of composition and temperature on the band gap and spin-orbit splitting is carried out. Determination of the position of the Fermi level on the surface (Fermi level pinning) for III-V crystals is considered. The currently developing technique for measuring photoreflectance in the mid-infrared range (photomodulation Fourier transform infrared spectroscopy) is described in detail. It is shown that phase correction plays a decisive role in such measurements. Original results demonstrate the capabilities of this method in a wide wavelength range.

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Temperature-dependent photoluminescence of InSb/InAs nanostructures with InSb thickness in the above-monolayer range

Cited by 29 publications

References 23 publications

Polyvinylpyrrolidone as a Stabilizer in Synthesis of AgInS2 Quantum Dots

Polyvinylpyrrolidone as a Stabilizer in Synthesis of AgInS2 Quantum Dots

Investigation of infrared photoluminescence spectra of Ge_1-x-ySi_xSn_y/Si nanostructures

Инфракрасное Фотоотражение Полупроводниковых Материалов a-=sup=-3-=/Sup=-B-=sup=-5-=/Sup=- ( О Б З О Р )

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Temperature-dependent photoluminescence of InSb/InAs nanostructures with InSb thickness in the above-monolayer range

Cited by 29 publications

References 23 publications

Polyvinylpyrrolidone as a Stabilizer in Synthesis of AgInS2 Quantum Dots

Polyvinylpyrrolidone as a Stabilizer in Synthesis of AgInS2 Quantum Dots

Investigation of infrared photoluminescence spectra of Ge1-x-y Si x Sn y /Si nanostructures

Инфракрасное Фотоотражение Полупроводниковых Материалов a-=sup=-3-=/Sup=-B-=sup=-5-=/Sup=- ( О Б З О Р )

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Investigation of infrared photoluminescence spectra of Ge_1-x-ySi_xSn_y/Si nanostructures