Temperature dependent photoluminescence of PECVD a-SiOx:H (x&lt;2)

Bacıoğlu, Akin; Kodolbaş, Alp Osman; Öktü, Ö.

doi:10.1016/j.jlumin.2010.04.001

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“…The challenge to use silicon as an emitter device is to produce tunable PL in the entire visible range [3]. Several techniques have been employed to obtain silicon nanoparticles, such as sputtering [4][5][6], evaporation [7,8], PECVD [2,9], ionic implantation [10], among others. In general, these techniques produce a silicon-rich material by deposition or growth followed by annealing at high temperature to form silicon nanoparticles [2].…”

Section: Introductionmentioning

confidence: 99%