Temperature dependent photoresponse of MoS2/VO2 heterojunction

Metal−semiconductor−metal (MSM) photodetectors (PD) are highly versatile and beneficial in a vast array of optical and optoelectronic systems. Although vanadium dioxide (VO 2 ) has a high broadband absorbance, its distinctive electrical and structural features have mostly been utilized for near-infrared (NIR) photodetection. Here, we propose a unique design for a PD using a heterojunction made of VO 2 /oxygenated-Ti (Ti−O) sandwiched between two Au electrodes. The VO 2 film acts as a photon accumulator in this arrangement, and the band bending at the VO 2 / Ti−O interface helps to separate charges to reduce carrier recombination and inject electrons into the more conductive Ti− O layer. The design completely eliminated all size restrictions of the active layer, regardless of its electrical conductivity, and demonstrated superiority in almost all performance metrics. A remarkable photocurrent density of around 57 μA/cm 2 and a rapid response time of 1−2 ms in the presence of visible light was seen at a low bias voltage of 100 mV. The highest detectivity and photocurrent density obtained in our experimental range were 3.2 × 10 10 Jones, and 465 μA/cm 2 , respectively, using an 800 mV bias voltage and 590 nm light (power density: 76 μW/cm 2 ). For VO 2 (M)-based MSM type devices, the proposed PD design exhibited the highest responsivity of approximately 2.54 A/W and an exceptional external quantum efficiency (EQE) of around 534%.

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Highly tunable multilevel resistive states in VO₂/CuInP₂S₆ heterojunctions combining ionic migration and metal–insulator transition

Wu,

Zhang,

Shan

et al. 2024

J. Mater. Chem. C

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Temperature dependent photoresponse of MoS2/VO2 heterojunction

Cited by 3 publications

References 12 publications

Vacancy-driven resistive switching behavior based on wafer-scale MoSe2 artificial synapses

Vacancy-driven resistive switching behavior based on wafer-scale MoSe2 artificial synapses

A Unique VO₂ Heterojunction-Based Ultrafast Photodetector Configuration for Exceptional Quantum Efficiency and Superior Responsivity

Highly tunable multilevel resistive states in VO₂/CuInP₂S₆ heterojunctions combining ionic migration and metal–insulator transition

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Temperature dependent photoresponse of MoS2/VO2 heterojunction

Cited by 3 publications

References 12 publications

Vacancy-driven resistive switching behavior based on wafer-scale MoSe2 artificial synapses

Vacancy-driven resistive switching behavior based on wafer-scale MoSe2 artificial synapses

A Unique VO2 Heterojunction-Based Ultrafast Photodetector Configuration for Exceptional Quantum Efficiency and Superior Responsivity

Highly tunable multilevel resistive states in VO2/CuInP2S6 heterojunctions combining ionic migration and metal–insulator transition

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A Unique VO₂ Heterojunction-Based Ultrafast Photodetector Configuration for Exceptional Quantum Efficiency and Superior Responsivity

Highly tunable multilevel resistive states in VO₂/CuInP₂S₆ heterojunctions combining ionic migration and metal–insulator transition