Temperature dependent pohotoluminescence investigation of AlGaAs/GaAs quantum wires grown by flow rate modulation epitaxy

Abstract

The temperature dependence of photoluminescence (PL) properties of AlGaAs/GaAs quantum wire (QWR) grown on V-grooved substrates by flow rate modulation epitaxy is investigated. PL from a 7.1 nm thick QWR is easily observed even at room temperature. The full width at half-maximum (FWHM) of the QWR emission peak increases linearly with increasing temperature at low temperatures and becomes almost independent of temperature at high temperatures, while that of a quantum well layer (QWL) sample increases with increasing temperature up to room temperature. The FWHM of QWR is found to be considerably narrower than that of the QWL sample at high temperatures, which is expected theoretically from the sharp one-dimensional density of states of QWR but has not been clearly observed experimentally.

Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate

“…Furthermore, the PL measurements show that the intermixing increases the transfer rate of photogenerated carriers to QWR in a similar way to the preferential etching study. 15 It is interesting to note that the PL from the SQWL shows broadening after RTA. This is due to the different intermixing rates of SQWLs depending on their depth from the surface.…”

“…As the measurement temperature increases, the relative PL intensity of QWR is increased similarly to the nonintermixed QWR luminescence. [13][14][15] The increase of PL of the QWR is due to the carrier thermalization in the QWR potential well. In Fig.…”

“…17 Figure 8 shows the room temperature PL of the sample annealed at 950°C for 30 s. No significant broadening of the QWR PL peak was observed presumably due to the twodimensional confinement. 15 Furthermore, the well resolved QWR PL peak reflects no significant change in optical quality after the intermixing. Figure 9 shows the spatially resolved room temperature CL images recorded at 730 and 800 nm, respectively.…”

“…Enhancement of photoluminescence ͑PL͒ from the QWR was found after preferential etching of the top QWL and a part of the SQWLs, since their elimination increases the transfer rate of carriers to the QWR. [13][14][15] QWL intermixing has drawn a great deal of attention since the technique offers the possibility of tunning the emission wavelength, which is desirable for photonic integrated circuit applications. 16 QWR intermixing may also provide interesting opportunities for fundamental studies.…”

Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires

“…The similar transitions were reported in the V-grooved wire structures. [11][12][13] Figure 2͑b͒ illustrates clearly that the emissions 1, 2 and 3 are from the patterned substrate regions. The spectra in Fig.…”