Temperature-dependent polarity reversal in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Au</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Nb</mml:mi><mml:mo>:</mml:mo><mml:mi mathvariant="normal">Sr</mml:mi><mml:mi mathvariant="normal">Ti</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>Schottky junctions

Susaki, Tomofumi; Kozuka, Y.; Tateyama, Y.; Hwang, Harold Y.

doi:10.1103/physrevb.76.155110

Cited by 56 publications

(47 citation statements)

References 19 publications

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“…Because of the wide usage of STO and the ubiquitous presence of metal electrodes, the physical properties of metal/STO heterojunctions have been well explored. [30][31][32][33] In general, without the significant pinning of Fermi level, the barrier height at the interface is related to the work function of the metal used. In our heterojunctions, the Al/STO interface shows an ohmic behavior, whereas Pt is expected to form a Schottky junction with STO as it has one of the highest work functions among all metal.…”

confidence: 99%

Tunable photovoltaic effect and solar cell performance of self-doped perovskite SrTiO3

Jin

Wang

et al. 2012

AIP Advances

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We report on the tunable photovoltaic effect of self-doped single-crystal SrTiO3 (STO), a prototypical perovskite-structured complex oxide, and evaluate its performance in Schottky junction solar cells. The photovaltaic characteristics of vacuum-reduced STO single crystals are dictated by a thin surface layer with electrons donated by oxygen vacancies. Under UV illumination, a photovoltage of 1.1 V is observed in the as-received STO single crystal, while the sample reduced at 750 °C presents the highest incident photon to carrier conversion efficiency. Furthermore, in the STO/Pt Schottky junction, a power conversion efficiency of 0.88% was achieved under standard AM 1.5 illumination at room temperature. This work establishes STO as a high-mobility photovoltaic semiconductor with potential of integration in self-powered oxide electronics

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confidence: 99%

Tunable photovoltaic effect and solar cell performance of self-doped perovskite SrTiO3

Jin

Wang

et al. 2012

AIP Advances

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“…6,7 The influence of interface states and interface dipoles, 8,9 temperature, and electric field dependence of the dielectric permittivity in complex oxides have to be incorporated for a complete description of the transport characteristics across such Schottky interfaces. 10 However, studies related to the homogeneity of the transport properties at such complex oxide interfaces, where competing electronic phases might coexist, are absent, primarily due to the limitations of the techniques used thus far. Here, using the technique of ballistic electron emission microscopy (BEEM), we investigate transport properties at different regions in a La 0.67 Sr 0.33 MnO 3 (LSMO)/Nb-doped SrTiO 3 (Nb:STO) heterostructure at the nanoscale and at different temperatures.…”

Section: Introductionmentioning

confidence: 99%

Probing electron transport across a LSMO/Nb:STO heterointerface at the nanoscale

2013

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We investigate electron transport across a complex oxide heterointerface of La 0.67 Sr 0.33 MnO 3 (LSMO) on Nb:SrTiO 3 (Nb:STO) at different temperatures. For this, we employ the conventional current-voltage method as well as the technique of ballistic electron emission microscopy (BEEM), which can probe lateral inhomogeneities in transport at the nanometer scale. From current-voltage measurements, we find that the Schottky barrier height (SBH) at the LSMO/Nb:STO interface decreases at low temperatures accompanied by a larger than unity ideality factor. This is ascribed to the tunneling dominated transport caused by the narrowing of the depletion width at the interface. However, BEEM studies of such unbiased interfaces do not exhibit SBH lowering at low temperatures, implying that this is triggered by the modification of the interface due to an applied bias and is not an intrinsic property of the interface. Interestingly, the SBH at the nanoscale, as extracted from BEEM studies, at different locations in the device is found to be spatially homogeneous and similar both at room temperature and at low temperatures. Our results highlight the application of BEEM in characterizing electron transport and its homogeneity at such unbiased complex oxide interfaces and yield insights into the origin of the temperature dependence of the SBH at biased interfaces.

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“…5 Obvious hysteresis in the current-voltage (I-V) curves (RS behavior) of metal/NSTO junctions have been reported in some papers, 3,6 but, in contrast, no trace of RS behavior was found at the metal/NSTO junctions reported in other papers. 7,8 Another problem is that the RS speed and resistance retention properties are poor compared with those of conductive-filament-type RS devices. 9,10 In particular, a long pulse voltage is needed to obtain a large resistance change, and the resistance state cannot be memorized for long in metal/NSTO junctions.…”

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confidence: 99%

Impact of Electrode Oxidation on the Current Transport Properties at Platinum/(Niobium-Doped Strontium-Titanate) Schottky Junctions

Hirose

Yoshikawa

Yanagi

et al. 2014

ECS J. Solid State Sci. Technol.

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The current transport properties and resistance-switching (RS) behavior at platinum/niobium-doped strontium-titanate (Pt/NSTO) Schottky junctions were investigated for junctions with different degrees of oxidation (PtO x ) in the Schottky electrode. It was found that the rectifying current-voltage (I-V) profile strongly depends on the heat-treatment of the NSTO crystal and oxidation of the Pt electrode. The hysteresis in the I-V relationships was larger for the PtO x /NSTO junction than for the pure Pt/NSTO junction, and heat-treatment of the NSTO crystal suppresses the hysteresis in I-V and increases the leakage current. The change in the rectifying I-V profiles can be reasonably explained by the increase in the built-in potential caused by partial oxidation of the electrode interface, as determined by soft X-ray photoemission spectroscopy. The experimental results indicate that control of the built-in potential and the partial oxidation of the electrode, which affects the homogeneity of the potential profile, is the key to improving and controlling the rectification and RS properties in Pt/NSTO junctions.Colossal electroresistance (CER) phenomena, i.e., the immense changes in electric resistance induced by applying electric fields, 1 have been observed in many metal/insulator/metal (MIM) structures including titanium oxide sandwiched by metal electrodes 2 and metal/semiconductor (MS) Schottky junction structures such as niobium-doped strontium titanate (NSTO) with a platinum (Pt) electrode. 3 One typical consequence of the CER effect is the so-called resistance-switching (RS) behavior, which is defined as a reversible change in the electronic resistance between the high-resistance state (HRS) and low-resistance state (LRS) upon application of an electric field such as a pulsed bias. What is unique about the RS behavior is that the HRS and LRS remain even after removal of the electric bias applied for switching. For this reason, RS behavior is of interest for the development of nonvolatile random access memory (NVRAM) cells. 2,4 Although the RS behavior of metal/NSTO junctions is interesting in terms of both physics and electronics, several technical problems remain. The most significant problem is poor reproducibility of the properties of metal/NSTO junctions. In particular, the appearance of RS behavior strongly depends on the sample preparation procedures. 5 Obvious hysteresis in the current-voltage (I-V) curves (RS behavior) of metal/NSTO junctions have been reported in some papers, 3,6 but, in contrast, no trace of RS behavior was found at the metal/NSTO junctions reported in other papers. 7,8 Another problem is that the RS speed and resistance retention properties are poor compared with those of conductive-filament-type RS devices. 9,10 In particular, a long pulse voltage is needed to obtain a large resistance change, and the resistance state cannot be memorized for long in metal/NSTO junctions. Therefore, for practical application of RS devices, we need to clarify the material and process parameters gover...

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Temperature-dependent polarity reversal inAu∕Nb:SrTiO3Schottky junctions

Cited by 56 publications

References 19 publications

Tunable photovoltaic effect and solar cell performance of self-doped perovskite SrTiO3

Tunable photovoltaic effect and solar cell performance of self-doped perovskite SrTiO3

Probing electron transport across a LSMO/Nb:STO heterointerface at the nanoscale

Impact of Electrode Oxidation on the Current Transport Properties at Platinum/(Niobium-Doped Strontium-Titanate) Schottky Junctions

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