Temperature Dependent Quantum Efficiencies in Multicrystalline Silicon Solar Cells

Søndenå, Rune; Berthod, Charly; Odden, Jan Ove; Soiland, A.-K.; Wiig, Marie Syre; Marstein, Erik Stensrud

doi:10.1016/j.egypro.2015.07.093

Cited by 5 publications

(3 citation statements)

References 28 publications

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“…Gettering is also less efficient in the HPMC part. In the upper part of the ingot, gettering of HPMC even results in a decrease of the mean lifetime, similar to a previous study on commercially available multicrystalline wafers . It has been shown that such a deterioration of the wafers by gettering typically can take place at the extended defects.…”

Section: Resultssupporting

confidence: 84%

Recombination Strength of Dislocations in High‐Performance Multicrystalline/Quasi‐Mono Hybrid Wafers During Solar Cell Processing

Adamczyk

Søndenå

You

et al. 2017

Physica Status Solidi (a)

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Wafers from a hybrid silicon ingot seeded in part for High Performance Multicrystalline, in part for a quasi‐mono structure, are studied in terms of the effect of gettering and hydrogenation on their final Internal Quantum Efficiency. The wafers are thermally processed in different groups – gettered and hydrogenated. Afterwards, a low temperature heterojunction with intrinsic thin layer cell process is applied to minimize the impact of temperature. Such procedure made it possible to study the effect of different processing steps on dislocation clusters in the material using the Light Beam Induced Current technique with a high spatial resolution. The dislocation densities are measured using automatic image recognition on polished and etched samples. The dislocation recombination strengths are obtained by a correlation of the IQE with the dislocation density according to the Donolato model. Different clusters are compared after different process steps. The results show that for the middle of the ingot, the gettering step can increase the recombination strength of dislocations by one order of magnitude. A subsequent passivation with layers containing hydrogen can lead to a decrease in the recombination strength to levels lower than in ungettered samples.

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Section: Resultssupporting

confidence: 84%

Recombination Strength of Dislocations in High‐Performance Multicrystalline/Quasi‐Mono Hybrid Wafers During Solar Cell Processing

Adamczyk

Søndenå

You

et al. 2017

Physica Status Solidi (a)

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“…A difference in power yield between similarly rated modules with cells made of ESS ® and polysilicon of between 1% and 2% over a year has been shown 1,2 , which is best explained by a better temperature coefficient in ESS ® cells. This effect has also been found on cell level, and studies indicate that the benefit in TCs mostly happens in the wavelength region 800 -1100 nm, suggesting that the effect is connected to differences in lifetime and/or mobility at elevated temperature 3 . In this paper we aim to initiate a quantitative investigation of the contributions of different relevant mechanisms on the temperature dependency of the compensated ESS ® -based cells by performing temperaturedependent device simulations in combination with experimental input data.…”

Section: Introductionmentioning

confidence: 71%

Temperature coefficients in compensated silicon solar cells investigated by temperature dependent lifetime measurements and numerical device simulation

Haug¹,

Skomedal²,

Søndenå³

et al. 2018

AIP Conference Proceedings

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Silicon solar modules typically operate at a higher temperature than the 25 °C used for standard testing, and the temperature coefficient (TC) therefore might have a significant impact on the field performance. In this paper the temperature dependent behavior of compensated Si solar cells has been simulated using PC1Dmod6.2, using a combination of physical models which include the effect of both temperature and compensation doping. The simulations were based on experimental input measured on two high performance multicrystalline ingots of similar resistivity of ~1.3 Ωcm, as well as one ingot with a resistivity of 0.5 Ωcm. Two of the ingots are produced using Elkem Solar Silicon (ESS ®), a compensated Si feedstock made using a metallurgical purification route, and the third is made from non-compensated reference material. Dopant concentrations as a function of height in the ingot were determined using a combination of experimental resistivity data, simulations and the Scheil equation. Temperature dependent lifetime images, measured on etched and passivated wafers after relevant solar cell processing steps were also acquired at different heights and used as input to the simulations. Taking all this into account, the simulated TC in the efficiency were found to be similar for the two 1.3 Ωcm ingots and slightly higher (less negative) in the 0.5 Ωcm ingot, mostly caused by differences in the TC of the short circuit current and fill factor. We find a reasonable agreement between the simulated and experimental TCs, with the main difference being a ~0.02 %/K more negative TC in the open circuit voltage in the simulated values. This corresponds to only a 6-7% relative deviation from the experimental values, showing the validity of the PC1Dmod model.

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“…Quantum efficiencies (QE) measured at different temperatures show that the main difference is in the 800 to 1100 nm range indicating a bulk lifetime effect. Converging QE curves towards 1200 nm indicates minimal effect of band gap narrowing on the light absorbtion in compensated silicon [25].…”

Section: Introductionmentioning

confidence: 98%

Simulated and measured temperature coefficients in compensated silicon wafers and solar cells

Haug

Berthod

Skomedal

et al. 2019

Solar Energy Materials and Solar Cells

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In this paper we perform a thorough investigation of the temperature coefficients of c-Si solar cells and wafers, based on both experimental data and device simulations. Groups of neighboring wafers were selected from different heights of four high performance multicrystalline silicon ingots cast using different dopants concentrations and Si feedstocks; Three different target resistivities of compensated silicon ingots based on Elkem Solar Silicon (ESS ® ), which are purified through a metallurgical route, and one non-compensated reference ingot. The wafers were processed into Al-BSF and PERCT type solar cells, as well as into lifetime samples subjected to selected solar cell processing steps before being etched down and re-passivated to assess the bulk lifetime of the final cells. Temperature-dependent photoluminescence imaging was used to study the spatial distribution of the carrier lifetime and the temperature coefficient of the lifetime. We observe a beneficial effect of higher doping levels on the temperature coefficients of the short circuit current in PERCT type cells, with the most favorable temperature coefficients are found in the ingot doped to 0.5 Ω-cm. Increasingly beneficial temperature coefficients in is also observed with increasing height in each ingot, which might be attributed to a combination of small variations in the dopant concentrations and to a clear increase in the temperature coefficient of the carrier lifetime with increasing ingot height. The latter point is also in agreement with the changes in the so-called gamma parameter of the open circuit voltage throughout the ingot. To build a more fundamental understanding of the experimental results the temperature dependence of the solar cells was simulated using PC1Dmod6.2. We find that the experimental temperature coefficients of the final cells can be reproduced in device simulations within 8 % of and 14 % for the and , respectively. The compensation level itself is of minor importance for the cell performance. Instead, the simulations indicate that the observed behavior in the temperature coefficients of the solar cells is mostly explained by differences in the net doping and carrier lifetime of the wafers.

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Temperature Dependent Quantum Efficiencies in Multicrystalline Silicon Solar Cells

Cited by 5 publications

References 28 publications

Recombination Strength of Dislocations in High‐Performance Multicrystalline/Quasi‐Mono Hybrid Wafers During Solar Cell Processing

Recombination Strength of Dislocations in High‐Performance Multicrystalline/Quasi‐Mono Hybrid Wafers During Solar Cell Processing

Temperature coefficients in compensated silicon solar cells investigated by temperature dependent lifetime measurements and numerical device simulation

Simulated and measured temperature coefficients in compensated silicon wafers and solar cells

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