2010
DOI: 10.7498/aps.59.4261
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Temperature-dependent Raman property of n-type SiC

Abstract: Micro-Raman scattering from the nitrogen doped n-SiC is performed at the temperatures ranging from 100 to 450 K. The temperature dependences of the first-order Raman scattering, electronic Raman spectra and the second-order Raman features are obtained. These measurements reveal that most of the first-order Raman phonon frequencies decrease with temperature increasing, but the redshifts of the acoustic phonon modes are smaller than those of the optical phonon modes. Meanwhile, the longitudinal optical phonon-pl… Show more

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Cited by 5 publications
(2 citation statements)
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“…Equation (3) shows that in a suitable range of forward bias voltage, the slope of the forward waveform in logarithmic coordinates should be close to q/kT , therefore, n should have a value close to 1.…”
Section: Characteristicsmentioning
confidence: 99%
“…Equation (3) shows that in a suitable range of forward bias voltage, the slope of the forward waveform in logarithmic coordinates should be close to q/kT , therefore, n should have a value close to 1.…”
Section: Characteristicsmentioning
confidence: 99%
“…Raman scattering was used to probe the vibrational states of SiC, which are also very sensitive to temperature [5]. In general, temperature dependent Raman scattering measurements are well suited to better understand the electronic properties of semiconductors at different temperatures as well as to analyze more specific aspects of lattice dynamics [6].…”
Section: Introductionmentioning
confidence: 99%