2016
DOI: 10.4236/ampc.2016.612029
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Temperature-Dependent Raman Scattering of ZnSe Nanowires

Abstract: We present a Raman scattering study of ZnSe over a temperature range from 80 to 580 K. Both of TO and LO modes of ZnSe nanowires are observed a red-shift with elevating temperature, and its intrinsic broadening is larger than that of bulk counterpart. The opticalphonon lifetime of ZnSe nanowires are longer than that of nanoparticles but shorter than that of bulk, which can be attributed to the different surface to volume ratios. Some overtones and multi-phonon peaks are also observed at high temperature due to… Show more

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Cited by 16 publications
(15 citation statements)
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“…MoSe 2 (288 and 350 cm −1 ), ZnSe (252 cm −1 ), and CZTSe (240 cm −1 ) appeared at point 2 (P2), which is near the Mo back-contact layer. 46 The tin oxide phase peak at 172 and 583 cm −1 was particularly strong at P2 and P3 (ie, near the interfaces). 47 The peak for tin oxides at the wavenumber of 172 cm −1 can overlap with that of CZTSe.…”
Section: Resultsmentioning
confidence: 97%
See 1 more Smart Citation
“…MoSe 2 (288 and 350 cm −1 ), ZnSe (252 cm −1 ), and CZTSe (240 cm −1 ) appeared at point 2 (P2), which is near the Mo back-contact layer. 46 The tin oxide phase peak at 172 and 583 cm −1 was particularly strong at P2 and P3 (ie, near the interfaces). 47 The peak for tin oxides at the wavenumber of 172 cm −1 can overlap with that of CZTSe.…”
Section: Resultsmentioning
confidence: 97%
“…The CZTSe phase (172, 196, and 240 cm −1 ) and CZTS peak (329 and 383 cm −1 ) were observed at each point. MoSe 2 (288 and 350 cm −1 ), ZnSe (252 cm −1 ), and CZTSe (240 cm −1 ) appeared at point 2 (P2), which is near the Mo back‐contact layer . The tin oxide phase peak at 172 and 583 cm −1 was particularly strong at P2 and P3 (ie, near the interfaces) .…”
Section: Resultsmentioning
confidence: 99%
“…According to Refs. [23][24][25], the modes at 138, 201, and 247 cm −1 are assigned to 2TA, TO, and LO, respectively, while the mode at 492 cm −1 is associated with the LO phonon replica (2LO). They are considered as the characteristic modes of the zincblende-type ZnSe structure.…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, it is well known that change of temperature can vary inter-atomic distances and vary the overlap among adjacent electronic orbitals. Therefore, temperature-dependent Raman spectra are well suitable to obtain information on the thermal conductivity of materials, as well as isotopic effects and phonon lifetimes [17][18][19].…”
Section: Introductionmentioning
confidence: 99%
“…Bi 2 Se 3 has an extensive application as thermoelectric and photoelectric materials near the room temperature [24,25]. Raman spectroscopy was an important tool to characterize the physical properties of various nanostructures, such as: 1T-TaS 2 [26], TiS 3 [27], MoS 2 [28], CoFe 2 O 4 [29], CuGaO 2 [30], Bi 3.25 La 0.75 Ti 3 O 12 [31], ZnSe [18,32], ZnO [33], etc. Recently, there are some reports about the Raman-active optical phonon of Bi 2 Se 3 micro/nanostructures [34][35][36].…”
Section: Introductionmentioning
confidence: 99%